Lithographic performance results for a new 50-kV electron-beam mask writer

Chakarian, Varoujan; Bylciw, Stephen; Sauer, Charles A.; Trost, David; Zywno, Marek; Teitzel, Robin; Raymond, Frederick; Abboud, Frank E.

doi:10.1117/12.410672

Cited by 7 publications

(1 citation statement)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…7,8,9 The datapath is illustrated in a simplified form in Figure 2. Pattern data is converted during mask writing from primitive geometries, such as rectangles and trapezoids, into pixels for exposure.…”

Section: Raster Graybeam Methodsmentioning

confidence: 99%

100-nm OPC mask patterning using raster-scan 50-kV pattern generation technology

Abboud¹,

Baik²,

Chakarian³

et al. 2002

21st Annual BACUS Symposium on Photomask Technology

Self Cite

View full text Add to dashboard Cite

The complexity of photomasks is rapidly increasing as semiconductor devices are scaled down and optical proximity correction (OPC) becomes commonplace. Raster scan architectures are well suited to the challenge of maintaining mask throughput despite these trends. Electron-beam techniques have the resolution to support OPC requirements into the foreseeable future. The MEBES ® eXara mask pattern generator combines the resolution of a finely focused electron probe with the productivity and accuracy of Raster Graybeam patterning. Features below 100nm can be created, and OPC designs are produced with consistent fidelity. Write time is independent of resist sensitivity, allowing high-dose processes to be extended, and relaxing sensitivity constraints on advanced chemically amplified resists. The system is designed for the production of 100nm photomasks, and will support the development of 70nm masks.

show abstract

Section: Raster Graybeam Methodsmentioning

confidence: 99%

100-nm OPC mask patterning using raster-scan 50-kV pattern generation technology

Abboud¹,

Baik²,

Chakarian³

et al. 2002

21st Annual BACUS Symposium on Photomask Technology

Self Cite

View full text Add to dashboard Cite

show abstract

Laser scanning for semiconductor mask pattern generation

Allen

2002

Proc. IEEE

View full text Add to dashboard Cite

Progress toward a raster multibeam lithography tool

Coyle

Shamoun

et al. 2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

A prototype raster multibeam optics is evaluated for 45 nm mask pilot lithography. A laser beam is split into 32 beamlets, which are modulated acousto-optically then focused onto a photocathode. This generates 32 electron beams which are scanned and focused on a writing surface. Photocathode photoyield and lifetime exceed 200 nA/mW and 100 h per spot, respectively. Photoyield recovers to within 1% after 1 min fully extinguished. The size of the laser spot is 300 nm, full width half maximum (FWHM) and the size of the corresponding electron beam spots is 50 nm (FWHM) at the writing plane. In the first demonstration of multiple electron beam lithography, 200 nm line/space arrays and 100 nm isolated lines were printed with an interim four-beam datapath. Preliminary experiments and a theoretical evaluation indicate that resist outgassing does not significantly reduce photocathode performance. An improved electron-optical column has also been designed, with a 35 nm pixel pitch, and a placement accuracy of <0.8 nm over a 120 μm field of view at the cathode and the scan field of 410×10 μm at the writing plane.

show abstract

Lithographic performance results for a new 50-kV electron-beam mask writer

Cited by 7 publications

References 0 publications

100-nm OPC mask patterning using raster-scan 50-kV pattern generation technology

100-nm OPC mask patterning using raster-scan 50-kV pattern generation technology

Laser scanning for semiconductor mask pattern generation

Progress toward a raster multibeam lithography tool

Contact Info

Product

Resources

About