LO-Phonon Band Filling by Means of Charge Carriers Accelerated in Electric Fields

Raguotis, R.; Brazis, R.

doi:10.12693/aphyspola.119.247

Search citation statements

Order By: Relevance

Paper Sections

Select...

Introduction1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2011

2014

Publication Types

Select...

Article1

Other1

Relationship

Self Cite0

Independent2

Authors

Journals

Cited by 2 publications

(1 citation statement)

References 9 publications

(12 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The presented novel one-particle Monte Carlo (MC) method has been used previously in [3][4][5][6][7][8][9][10]. Dramatic increases in the number of longitudinal optical (LO) phonons by several orders in comparison with the thermal equilibrium distribution have been obtained.…”

Section: Introductionmentioning

confidence: 99%

Monte Carlo simulation of non-equilibrium phonon accumulation in cubic GaN crystal

Raguotis¹,

Bumelienė²

2014

Phys. Scr.

View full text Add to dashboard Cite

The novel one-particle Monte Carlo procedure for the simulation of the longitudinal optical phonon distribution accumulation generated by electrons in a high electric field is presented in detail. The phonon and electron distributions are obtained employing novel code in zinc-blend n-type GaN crystals. The main quality of this code is the avoidance of the short-time-step procedure appropriate to the conventional ensemble Monte Carlo method. The maximum value of the phonon distribution function dramatically exceeds the thermal-equilibrium one. The influence of the phonon accumulation on the electron kinetic characteristics of zinc-blend GaN and other features, such as longitudinal optical phonon number inversion with respect to acoustic phonon modes, are discussed.

show abstract