Local etching of nanoholes and quantum rings with InxGa1−x droplets

Stemmann, A.; Köppen, T.; Grave, Matthias; Wildfang, S.; Mendach, Stefan; Hansen, W.; Heyn, Ch.

doi:10.1063/1.3225759

Cited by 40 publications

(43 citation statements)

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“…The nanohole openings are surrounded by distinct walls that are crystallized from droplet material and may act as quantum rings [2,3,9]. This establishes that the same droplet during LDE performs two opposite operations: first, the removal of material from the substrate which results in nanohole formation and, second, the deposition of material on the substrate which forms the wall around the nanohole openings.…”

Section: Mechanism Of Local Droplet Etchingmentioning

confidence: 97%

“…In this paper, we discuss the present understanding of the mechanism behind LDE and applications such as the creation of GaAs quantum rings [2,9] and of GaAs quantum dots (QDs) by nanohole filling [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

“…The method was introduced by Wang et al [1] for etching of GaAs surfaces with Ga droplets. We have expanded the range of materials and demonstrated etching with Ga [2][3][4][5], Al [6][7][8], GaAl, In [2], and InGa [9] droplets on GaAs, AlAs [6][7][8], and AlGaAs [2][3][4][5] substrates. The nanohole openings are surrounded by distinct walls that are crystallized from the initial droplet material [2,3].…”

Section: Introductionmentioning

confidence: 99%

“…The nanohole openings are surrounded by distinct walls that are crystallized from the initial droplet material [2,3]. This allows, for instance, the fabrication of GaAs quantum rings using Ga droplets on AlGaAs [2,9], or the generation of isolating AlAs walls with Al droplets [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Mechanism and applications of local droplet etching

Heyn

Stemmann

Klingbeil

et al. 2011

Journal of Crystal Growth

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Section: Mechanism Of Local Droplet Etchingmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Mechanism and applications of local droplet etching

Heyn

Stemmann

Klingbeil

et al. 2011

Journal of Crystal Growth

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“…Since then, there has been several different demonstrations of the suitability of different self-assembly [45][46][47][48] and even lithographic [49,50] methods to fabricate QRs from various semiconductor materials with different geometries.…”

Section: Quantum Rings and The Change Of Carrier Rotational Charactersmentioning

confidence: 99%

Indirect interband optical transitions in a semiconductor quantum ring with submicrometer dimensions

et al. 2011

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D e p a r t me nt o f M i c r o -a nd N a no s c i e nc e sT h e o re t ic al st udie s o f o pt ic al t ransit io ns in se mic o nduc t o r quant um st ruc t ure s O s mo V äns k ä D O C T O R A L D I S S E R T A T I O N SAalto University publication series DOCTORAL DISSERTATIONS 214/2014 Theoretical studies of optical transitions in semiconductor quantum structures Osmo VänskäA doctoral dissertation completed for the degree of Doctor of Science (Philosophy) to be defended, with the permission of the Aalto University School of Electrical Engineering, at a public examination held at the lecture hall TU1 of the TUAS building (Otaniementie 17, Espoo, Finland) on the 9th of January 2015 at 12 noon. Abstract Nanotechnologically fabricated structures out of compound semiconductor materials make up the functional parts in LEDs, in semiconductor lasers and in electronics components. The small size of the structures evidently leads to requiring the modeling to look at phenomena at the quantum level. Especially for optoelectronical devices, one needs to treat the interaction between light and semiconductor material. This research adds to the understanding of interpretations of light-matter interaction phenomena and makes it possible to find totally new and undiscovered functionalities in semiconductor nanostructures. AaltoThis thesis presents work on modeling and creates new theoretical foundations for phenomena appearing in semiconductor quantum structures. Of special interest has been to generate a theoretical description to such phenomena that have been caused by an optical field and in which one sees changes, e.g., in angular momentum or spatial distribution of excited states. Basically, two kinds of structures are examined, quantum rings and wells. A quantum ring is a toroidal object of which volume is very small, but its diameter can be significant when compared to the wavelength of light. Another class of systems under study is a double quantum well structure, where there are two quantum wells on both sides of a tunnel barrier. In this system, the type-I and type-II semiconductor band-structure properties become combined in spatial coordinates, since the electrons and holes can occupy either the same or the separate quantum wells.The two most interesting results are the angle-of-emission dependent photoluminescence from the quantum rings and the coherent control of vertical transport of desired quasiparticles through material interfaces in the quantum-well system in a selective manner. Since the obtained results on quantum rings are closely connected to the orbital-angular-momentum coupling between light and matter, they can prove to be important in different quantum information schemes where this angular-momentum aspect of light has been found to be highly beneficial. In quantum optics, there already are visible trends towards this direction. The predicted coherent control in a double-quantum-well system may mean a large technological progress, since by utilizing this effect one can study transport properties ...

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Field‐Controlled Quantum Dot to Ring Transformation in Wave‐Function Tunable Cone‐Shell Quantum Structures

Heyn

Küster

Zocher

et al. 2018

Physica Rapid Research Ltrs

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A new type of quantum structure is discussed where the probability distributions of the charge carriers are concentrated on the shell of a cone. These GaAs cone‐shell quantum structures (CSQSs) are filled into nanoholes in AlGaAs that are fabricated in a self‐assembled fashion using local droplet etching during molecular beam epitaxy. The structural properties of the CSQSs are studied with atomic force microscopy (AFM) and the optical emission with single‐dot photoluminescence (PL). Numerical simulations of the influence of a vertical electric field predict a strong field‐dependent displacement of either the electron or the hole away from the tip of the cone shell. This displacement has several consequences. First, the Coulomb interaction is strongly reduced. Accordingly, simulations as well as PL measurements indicate a non‐parabolic Stark‐shift for CSQSs with a regime of approximately constant emission energy. Second, the calculated exciton‐recombination lifetimes establish a variability from nanoseconds up to milliseconds. Third, regarding the shape of the electron or hole probability distributions, we predict a gate‐voltage controlled transformation from a dot into a ring shape. The respective other charge carrier remains as a dot.

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Local etching of nanoholes and quantum rings with InxGa1−x droplets

Abstract: Photoluminescence from GaAs nanodisks fabricated by using combination of neutral beam etching and atomic hydrogen-assisted molecular beam epitaxy regrowth Independent wavelength and density control of uniform GaAs/AlGaAs quantum dots grown by infilling selfassembled nanoholes

Cited by 40 publications

References 18 publications

Mechanism and applications of local droplet etching

Mechanism and applications of local droplet etching

Indirect interband optical transitions in a semiconductor quantum ring with submicrometer dimensions

Field‐Controlled Quantum Dot to Ring Transformation in Wave‐Function Tunable Cone‐Shell Quantum Structures

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