2018
DOI: 10.1021/jacs.8b02691
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Localized Vibrations of Bi Bilayer Leading to Ultralow Lattice Thermal Conductivity and High Thermoelectric Performance in Weak Topological Insulator n-Type BiSe

Abstract: Realization of high thermoelectric performance in n-type semiconductors is of imperative need on account of the dearth of efficient n-type thermoelectric materials compared to the p-type counterpart. Moreover, development of efficient thermoelectric materials based on Te-free compounds is desirable because of the scarcity of Te in the Earth's crust. Herein, we report the intrinsic ultralow thermal conductivity and high thermoelectric performance near room temperature in n-type BiSe, a Te-free solid, which rece… Show more

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Cited by 166 publications
(195 citation statements)
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“…κ lat ∥ along SPS ∥ ) due to the weaker bonding and weak force‐constants and lower group velocities of sound waves compared to those in the plane of layer direction (i.e. κ lat ⊥ along SPS ⊥ ) . Interestingly although both BiSe and BiTe possess very low κ lat with similar directional dependence, the difference between κ lat ∥ and κ lat ⊥ is relatively smaller in BiTe (Figure S11).…”
Section: Resultsmentioning
confidence: 99%
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“…κ lat ∥ along SPS ∥ ) due to the weaker bonding and weak force‐constants and lower group velocities of sound waves compared to those in the plane of layer direction (i.e. κ lat ⊥ along SPS ⊥ ) . Interestingly although both BiSe and BiTe possess very low κ lat with similar directional dependence, the difference between κ lat ∥ and κ lat ⊥ is relatively smaller in BiTe (Figure S11).…”
Section: Resultsmentioning
confidence: 99%
“…The valence band maximum (VBM) and conduction band minimum (CBM) appear at the A and L points, respectively, along with several near‐edge band extrema (Figure c). It is quite interesting to note that band gap of BiTe is higher than the iso‐structural compound BiSe ( E g ≈0.02–0.04 eV) despite a smaller electronegativity difference between the elements (i.e., Bi and Te) in the former compound. This observed difference in band gap probably originates from the topology of the electronic band structure of these compounds.…”
Section: Resultsmentioning
confidence: 99%
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“…When abundant heat is supplied at low cost, TE modules with high PF materials could be more commercially viable at present because they can consistently produce a large output power density under the given temperature gradient. [28][29][30][31][32][33][34] The surprising example is tin monoselenide (SnSe), which had not been considered for TE applications because of seemingly high electrical resistivity. [16][17][18][19][20][21][22] Recently, PbSe-based TE materials have also been greatly improved with new innovative strategies.…”
Section: Introductionmentioning
confidence: 99%