2015
DOI: 10.7567/jjap.54.05ed05
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Logic compatible process technology for embedded atom switches in CMOS

Abstract: We have developed a CMOS logic compatible process for embedding Cu atom switches in a Cu/low-k back-end-of-line without degrading interconnect and switch performance characteristics. The key technologies are (i) burying a via-interlayer dielectric layer between the switches without voids, followed by surface planarization using chemical mechanical polishing, and (ii) introducing a Ta protective second top electrode, which realizes simultaneous via-openings to both the switches and the lower interconnects witho… Show more

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Cited by 3 publications
(3 citation statements)
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“…4,5) To overcome these issues, an atom-switch (AS)-FPGA has been proposed in which ASs are used to construct highperformance compact routing blocks (RBs) and memories. [6][7][8][9][10][11][12][13][14][15] An AS, composed of a solid electrolyte layer sandwiched by an active metal electrode and an inert metal electrode, [16][17][18][19][20][21][22][23][24][25][26][27][28] is a non-volatile resistance-change device which leads to low standby power consumption. The area overhead is reduced because the AS is integrated in the backend of the line.…”
Section: Introductionmentioning
confidence: 99%
“…4,5) To overcome these issues, an atom-switch (AS)-FPGA has been proposed in which ASs are used to construct highperformance compact routing blocks (RBs) and memories. [6][7][8][9][10][11][12][13][14][15] An AS, composed of a solid electrolyte layer sandwiched by an active metal electrode and an inert metal electrode, [16][17][18][19][20][21][22][23][24][25][26][27][28] is a non-volatile resistance-change device which leads to low standby power consumption. The area overhead is reduced because the AS is integrated in the backend of the line.…”
Section: Introductionmentioning
confidence: 99%
“…4,5) To overcome these issues, a nanobridge-based FPGA (NB-FPGA) has been proposed, where NBs construct highperformance compact routing matrix and memories. [6][7][8][9][10][11][12][13][14][15] The NB composed of a solid-electrolyte layer sandwiched by an active metal electrode and an inert metal electrode [16][17][18][19][20][21][22][23][24][25][26][27][28] is a nonvolatile resistance-change device, which leads to low standby power consumption. Area overhead is reduced since the NB is integrated in the backend-of-line.…”
Section: Introductionmentioning
confidence: 99%
“…4,5) To overcome these issues, an atom-switch-based FPGA has been proposed, in which atom switches construct highperformance compact routing matrices and memories. [6][7][8][9][10][11][12][13] An atom switch composed of a solid-electrolyte layer sandwiched by an active metal electrode and an inert metal electrode [14][15][16][17][18][19][20][21][22][23][24][25] is a nonvolatile resistance-change device, which provides low standby power consumption. The area overhead is reduced owing to integration of the atom switch between 4 and 5 metals.…”
Section: Introductionmentioning
confidence: 99%