Logic Suitability of 50-nm $\hbox{In}_{0.7} \hbox{Ga}_{0.3}\hbox{As}$ HEMTs for Beyond-CMOS Applications

A Self-Aligned InGaAs HEMT Architecture for Logic Applications

“…DIBL and SS also improve as t ins is decreased. All these figures of merit are defined as in [18]. The short-channel figures of merit achieved by t ins = 5-nm devices are excellent and at least comparable to the best published data on Si CMOS devices from the literature of similar gate length [ Fig.…”

On the scaling of subnanometer EOT gate dielectrics for ultimate nano CMOS technology

“…Germanium was also proposed to be an alternative channel material because of its high mobility because of its larger energy relaxation time and may allow the velocity overshoot to occur in longer gate lengths. In was predicted that some other higher mobility materials, such as graphene, GaAs, and InSb, may also be introduced in some farther technology nodes [47][48][49][50].…”

Investigation of scalability of In0.7Ga0.3As quantum well field effect transistor (QWFET) architecture for logic applications

“…Recently, higher indium concentration In 0.7 Ga 0.3 As and InAs channel QWFETs have been experimentally demonstrated with gate length (L G ) down to 50 nm with excellent short channel performance and high speed response operating at 0.5 V supply voltage [7][8][9], albeit with large separation between the source and drain metal electrodes (L SD = 2 lm). In order to implement III-V QWFETs in future high-performance logic applications, its scalability both in terms of physical gate length as well as the overall footprint of the transistor should be thoroughly investigated.…”

“…The paper is organized as follows. In Section 2, we perform calibration of the numerical simulator to the experimental 50 nm L G In 0.7 Ga 0.3 As QWFETs [7,8], to match both the ON-current in linear and saturation regime as well as the sub-threshold response. In Section 3, we investigate the effect of both lateral and vertical scaling on the In 0.7 Ga 0.…”

“…The proposed architecture is generic and could be applied to next generation antimonide-based QWFETs such as InAs x Sb 1Àx and In y Ga 1Ày Sb, currently under investigation [11]. [7]. The composite channel consists of 3/8/ 4 nm thick In 0.53 Ga 0.47 As/In 0.7 Ga 0.3 As/In 0.53 Ga 0.47 As and features both regular and buried-Pt gate stack with L G = 50 nm in direct contact with the upper In 0.52 Al 0.48 As barrier forming a Schottky junction.…”