Long electron spin coherence in ion-implanted GaN: The role of localization

Buß, J. H.; Rudolph, J.; Shvarkov, Stepan; Hardtdegen, H.; Wieck, A. D.; Hägele, D.

doi:10.1063/1.4804558

Cited by 15 publications

(11 citation statements)

References 28 publications

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“…The spin relaxation time τ s,loc ≈ 1.8 ns estimated from Eq. (7) for completely localized electrons [29] is in very good agreement with the saturation value of the spin relaxation time for the highest implanted dose (see Fig. 12a).…”

Section: Ga and Au Ion Implanted Wurtzite Gansupporting

confidence: 81%

“…The density of the implanted Au ions was rescaled to take the different defect generation rates for the implantation of Ga and Au ions into account. (Reprinted with permission from (). Copyright 2013, AIP Publishing LLC.…”

Section: Spin Dynamics In Ion‐implanted Ganmentioning

confidence: 99%

“…The sample and the implantation procedure are in detail described in Ref. (). Figure a shows the spin relaxation time

τ_{s, 0}

for zero magnetic field and

τ_{s, B}

for a moderate external magnetic field (

B_{ext} = 0.2

T) for various implanted Ga doses.…”

Section: Spin Dynamics In Ion‐implanted Ganmentioning

confidence: 99%

“…14a and b). Rescaling the implanted densities to take the different defect generation rates for implantation of Ga and Au ions, respectively, into account [29], leads even to a universal dependence on the implanted density (see Fig. 14c and d).…”

Section: Ga and Au Ion Implanted Wurtzite Ganmentioning

confidence: 99%

“…While the spin dynamics in the dilute nitrides GaNAs and GaInNAs , and of holes () and especially excitons in GaN has been intensively studied, the electron spin dynamics in GaN had been only rarely studied after the early work of Beschoten (). Here, we will give a review of our experimental investigations of the electron spin dynamics in bulk GaN by time‐resolved magneto‐optical Kerr‐rotation (TRKR) spectroscopy . After a short overview of the theory of electron spin relaxation in GaN, we will first discuss the spin dynamics in bulk wurtzite GaN in dependence on external magnetic field, temperature, and doping density.…”

Section: Introductionmentioning

confidence: 99%

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Electron spin dynamics in GaN

Rudolph

Buß

Hägele

2014

Physica Status Solidi (b)

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This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.Gallium nitride is a promising material system for spintronics, offering long spin relaxation times and prospects for room-temperature ferromagnetism. We review the electron spin dynamics in bulk GaN. Time-resolved magneto-optical studies of both the wurtzite and the cubic phase of GaN show the dominance of Dyakonov-Perel (DP) relaxation for free conduction band electrons. Spin relaxation in the wurtzite phase is characterized by an intrinsic spin relaxation anisotropy and the limitation of spin lifetimes by a strong Rashba term. Spin lifetimes are strongly enhanced in cubic GaN, where only a weak Dresselhaus term contributes to DP relaxation. Ion-implanted wurtzite GaN shows a strong increase of electron spin lifetimes for increasing implantation dose, caused by increasing localization of carriers. The spin dynamics of conduction band electrons in Gd-implanted GaN as a candidate for a room-temperature ferromagnetic semiconductor is also only governed by localization effects and does not show signs of an efficient exchange coupling between the electrons and the magnetic Gd ions.1 Introduction Spintronics as the novel spin-based semiconductor electronics has been an intense and fruitful field of research in the last years, leading to the discovery and detailed understanding of numerous spin effects [1][2][3][4][5]. In addition, a plethora of possible applications including, e.g., the famous spin transistor [6] or spin optoelectronic devices [7][8][9], has been proposed. However, for the realization of the proposed concepts challenging requirements are imposed on the underlying semiconductor materials, like, e.g., very long spin lifetimes or ferromagnetic behavior with Curie temperatures above room temperature. These challenges have triggered intense research on optimized structures and new materials. In particular, GaN has attracted strong interest as it promises to combine fascinating properties, ranging from weak spin-orbit coupling due to its light constituting elements over high-temperature ferromagnetism upon doping with rare earth ions [10] up to its good optoelectronic properties [11] and its well established use in the semiconductor industry [12]. In addition, GaN is a highly instructive model system for the influence of crystal symmetry on the electron spin dynamics as besides the thermodynamically stable wurtzite phase also the metastable cubic phase can be prepared [13]. While the spin dynamics in the dilute nitrides GaNAs and GaInNAs [14][15][16][17][18], and of holes [19] and especially excitons in GaN [20][21][22][23]

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Section: Ga and Au Ion Implanted Wurtzite Gansupporting

confidence: 81%

Section: Spin Dynamics In Ion‐implanted Ganmentioning

confidence: 99%

“…The sample and the implantation procedure are in detail described in Ref. (). Figure a shows the spin relaxation time

τ_{s, 0}

for zero magnetic field and

τ_{s, B}

for a moderate external magnetic field (

B_{ext} = 0.2

T) for various implanted Ga doses.…”

Section: Spin Dynamics In Ion‐implanted Ganmentioning

confidence: 99%

Section: Ga and Au Ion Implanted Wurtzite Ganmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Electron spin dynamics in GaN

Rudolph

Buß

Hägele

2014

Physica Status Solidi (b)

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Effective Manipulation of Spin Dynamics by Polarization Electric Field in InGaN/GaN Quantum Wells at Room Temperature

et al. 2020

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III‐nitride wide bandgap semiconductors are favorable materials for developing room temperature spintronic devices. The effective manipulation of spin dynamics is a critical request to realize spin field‐effect transistor (FET). In this work, the dependence of the spin relaxation time on external strain‐induced polarization electric field is investigated in InGaN/GaN multiple quantum wells (MQWs) by time‐resolved Kerr rotation spectroscopy. Owing to the almost canceled two different spin–orbit coupling (SOC), the spin relaxation time as long as 311 ps in the MQWs is obtained at room temperature, being much longer than that in bulk GaN. Furthermore, upon applying an external uniaxial strain, the spin relaxation time decreases sensitively, which originates from the breaking of the SU (2) symmetry. The extracted ratio of the SOC coefficients shows a linear dependence on the external strain, confirming the essential role of the polarization electric field. This effective manipulation of the spin relaxation time sheds light on GaN‐based nonballistic spin FET working at room temperature.

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Electron spin dynamics in multi-energy level systems under the excitation of circular polarization modulated continuous-wave laser

Liang

Zhao

2023

Journal of Luminescence

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Long electron spin coherence in ion-implanted GaN: The role of localization

Cited by 15 publications

References 28 publications

Electron spin dynamics in GaN

Electron spin dynamics in GaN

Effective Manipulation of Spin Dynamics by Polarization Electric Field in InGaN/GaN Quantum Wells at Room Temperature

Electron spin dynamics in multi-energy level systems under the excitation of circular polarization modulated continuous-wave laser

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