Long-Lifetime True Green Laser Diodes with Output Power over 50 mW above 525 nm Grown on Semipolar $\{20\bar{2}1\}$ GaN Substrates

Yanashima, Katsunori; Nakajima, Hiroshi; Tasai, Kunihiko; Naganuma, Kaori; Fuutagawa, Noriyuki; Takiguchi, Yuichi; Hamaguchi, Tatsushi; Ikeda, Masao; Enya, Yohei; Takagi, Shimpei; Adachi, Masahiro; Kikuchi, Takashi; Yoshizumi, Yusuke; Sumitomo, Takamichi; Yamanaka, Yuichiro; Kumano, Tetsuya; Tokuyama, Shinji; Sumiyoshi, Kazuhide; Saga, Nobuhiro; Ueno, Masaki; Kawasaki, Koji; Ikegami, Takatoshi; Nakamura, Toshio

doi:10.1143/apex.5.082103

Cited by 44 publications

(22 citation statements)

References 12 publications

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“…Several research groups have developed green lasers using nonpolar or semipolar GaN substrates, and have demonstrated continuous‐wave (CW) lasing operation . Green LDs on semipolar

{20 \bar{2} 1}

GaN substrates have shown particularly good laser characteristics, such as a low threshold current and long lasing wavelength, and output operation of over 100 mW was demonstrated . However, watt‐class output operation of green LDs on nonpolar or semipolar substrates have yet to be achieved.…”

Section: Polar and Semipolar Gan Substratesmentioning

confidence: 99%

Watt‐Class Green (530 nm) and Blue (465 nm) Laser Diodes

Murayama¹,

Nakayama²,

Yamazaki³

et al. 2017

Physica Status Solidi (a)

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In this research, watt-class green and blue laser diodes, which are fabricated on free-standing semipolar 20 21g f GaN and conventional c-plane GaN substrates, respectively are developed. Although several research groups have recently developed green laser diodes on semipolar GaN substrates, which have weaker piezoelectric fields and higher indium homogeneity in InGaN active regions compared to c-plane GaN, watt-level output power has yet to be achieved. By utilizing the 20 21g f plane, the first watt-class green lasers at 530 nm is successfully fabricated, and achieve maximum output powers in excess of 2 W, which to the best of our knowledge is the highest value reported for any GaN-based green laser diode. A wall-plug efficiency of 17.5% is realized at a current of 1.2 A under continuous-wave operation, which corresponds to an optical output of approximately 1 W and is the highest value reported to date. In addition, high-power and high-efficiency blue laser diodes at 465 nm are successfully fabricated on conventional c-plane GaN substrates. The output power and wall-plug efficiency are 5.2 W and 37.0%, respectively, at a current of 3.0 A under continuous-wave operation. These laser diodes are promising light sources meeting the ITU-R Recommendation BT.2020 for future laser display applications.

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“…Several research groups have developed green lasers using nonpolar or semipolar GaN substrates, and have demonstrated continuous‐wave (CW) lasing operation . Green LDs on semipolar

{20 \bar{2} 1}

Section: Polar and Semipolar Gan Substratesmentioning

confidence: 99%

Watt‐Class Green (530 nm) and Blue (465 nm) Laser Diodes

Murayama¹,

Nakayama²,

Yamazaki³

et al. 2017

Physica Status Solidi (a)

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“…Green InGaN LDs with emission wavelength above 500 nm grown on c-plane, 2-8 ð11 22Þ plane, 9 and ð20 21Þ plane GaN (Refs. [10][11][12][13] have been realized within two years. As reported in those publications, the key issue for realizing green InGaN LDs is the preparation of In-rich (normally >30%) InGaN quantum wells (QWs) with high material quality.…”

mentioning

confidence: 99%

Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth

Li¹,

Liu²,

Feng³

et al. 2013

Applied Physics Letters

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“…The highest wavelength reported for a GaN‐based LD is by Sumitomo Electric on semipolar

(20 \bar{2} 1)

with a lasing wavelength of 533.6 nm . Figure compares the threshold current density versus lasing wavelength for green LDs on c ‐plane and non‐basal substrates …”

Section: Successes and Challengesmentioning

confidence: 99%

A Decade of Nonpolar and Semipolar III-Nitrides: A Review of Successes and Challenges

Monavarian

Rashidi

Feezell

2018

Phys. Status Solidi A

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The performance of III-nitride devices is degraded by polarization in a wurtzite crystal structure. Nonpolar and semipolar III-nitrides have been extensively studied since the early 2000s as a solution to the polarizationrelated issues. Removal of polarization is expected to improve the radiative efficiency, optical gain, charge transport, and potentially offer solutions to the challenging problems in III-nitride light-emitting diodes (LEDs) known as efficiency droop and the green gap. In addition, use of nonpolar and semipolar orientations is also predicted to offer polarization pinning in some devices due to anisotropic in-plane strain. Despite the many potential advantages over c-plane, nonpolar and semipolar optoelectronic devices have not successfully replaced conventional c-plane devices in the commercial sector. Here, nonpolar and semipolar III-nitrides are reviewed after more than a decade of development. The successes and challenges of nonpolar and semipolar orientations for applications such as LEDs, laser diodes, superluminescent diodes, and vertical-cavity surface emitting lasers are discussed. New potential avenues for nonpolar and semipolar III-nitrides are also highlighted, including visible-light communication and power electronics. The availability of low-cost, high-crystal-quality substrates with nonpolar or semipolar orientation is discussed and alternative approaches for realizing these orientations are presented, including selective-area bottom-up nanostructures.

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Long-Lifetime True Green Laser Diodes with Output Power over 50 mW above 525 nm Grown on Semipolar $\{20\bar{2}1\}$ GaN Substrates

Cited by 44 publications

References 12 publications

Watt‐Class Green (530 nm) and Blue (465 nm) Laser Diodes

Watt‐Class Green (530 nm) and Blue (465 nm) Laser Diodes

Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth

A Decade of Nonpolar and Semipolar III-Nitrides: A Review of Successes and Challenges

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