Long-term and Annealing Stable, Solderable PVD Metallization with Optimized Al Diffusion Barrier

Microstructure and long-term stability of solder joints on nickel-plated aluminium formed during short soldering times

“…For the interconnection of silicon solar cells, this coating process might be suitable, as the rear electrode mostly consist of Al, either screen printed paste, PVD Al 35 or Al foil. 36,37 Since the presented wet chemical coating is a low-temperature process, it could also be used to coat temperature sensitive devices with Al components.…”

Nondestructive Method for Mapping Metal Contact Diffusion in In2O3 Thin-Film Transistors

“…13,21−23 Al contacts are commonly used due to the electrical properties and cost, which give reliable, time-stable contacts. 24 One of the major drawbacks in using Al contacts is the formation of the native oxide and Al diffusion into the semiconductor material which can affect the contact reliability. 24−26 …”

“…24 One of the major drawbacks in using Al contacts is the formation of the native oxide and Al diffusion into the semiconductor material which can affect the contact reliability. 24−26 …”

“…13,21−23 Al contacts are commonly used due to the electrical properties and cost, which give reliable, time-stable contacts. 24 One of the major drawbacks in using Al contacts is the formation of the native oxide and Al diffusion into the semiconductor material which can affect the contact reliability. 24−26 In this paper we first present a method for using SKPM and AFM to determine diffusion regions in In differently doped regions accentuates the difference, making the potential change easily detectable.…”

“…In 2 O 3 is popular for potential device applications including liquid crystal displays, solar cells, and resistive memories. − In 2 O 3 TFTs have also been proposed for high-resolution displays where it is preferable to have a large on-current to drive pixels and a low off-current for low power consumption. In 2 O 3 TFTs on SiO 2 /Si substrates and Al electrodes are typically bottom gate, normally on n-channel transistors with a carrier mobility in the range from 0.4 to 23 cm 2 /V·s and on–off ratio of ∼10 5 –10 6 . ,− Al contacts are commonly used due to the electrical properties and cost, which give reliable, time-stable contacts . One of the major drawbacks in using Al contacts is the formation of the native oxide and Al diffusion into the semiconductor material which can affect the contact reliability. − …”