Long-term stability of photodetectors based on graphene field-effect transistors encapsulated with Si3N4 layers

Su, F. Y.; Zhang, Zhaohao; Li, Shasha; Li, Peian; Deng, Tao

doi:10.1016/j.apsusc.2018.07.208

Cited by 23 publications

(10 citation statements)

References 45 publications

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“…The buried-gate GFETs were fabricated using a similar method shown in our previous work [36]. The buried chromium (Cr)/gold (Au) gate electrodes with thicknesses of 10 and 30 nm were deposited on a substrate consisted of 200-nm-thick silicon nitride (Si 3 N 4 ), 50-nm-thick aluminum (Al), and 500-μm-thick silicon (Si), using magnetron sputtering.…”

Section: Methodsmentioning

confidence: 99%

Solar-blind ultraviolet detection based on TiO₂ nanoparticles decorated graphene field-effect transistors

Deng

Zhang

et al. 2019

Nanophotonics

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Sensitive solar-blind ultraviolet (UV) photodetectors are important to various military and civilian applications, such as flame sensors, missile interception, biological analysis, and UV radiation monitoring below the ozone hole. In this paper, a solar-blind UV photodetector based on a buried-gate graphene field-effect transistor (GFET) decorated with titanium dioxide (TiO2) nanoparticles (NPs) was demonstrated. Under the illumination of a 325-nm laser (spot size ~2 μm) with a total power of 0.35 μW, a photoresponsivity as high as 118.3 A/W was obtained, at the conditions of zero gate bias and a source-drain bias voltage of 0.2 V. This photoresponsivity is over 600 times higher than that of a recently reported solar-blind UV photodetector based on graphene/vertical Ga2O3 nanowire array heterojunction (0.185 A/W). Experiments showed that the photoresponsivity of the TiO2 NPs decorated GFET photodetectors can be further enhanced by increasing the source-drain bias voltage or properly tuning the gate bias voltage. Furthermore, the photoresponse time of the TiO2 NPs decorated GFET photodetectors can also be tuned by the source-drain bias and gate bias. This study paves a simple and feasible way to fabricate highly sensitive, cost-efficient, and integrable solar-blind UV photodetectors.

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Section: Methodsmentioning

confidence: 99%

Solar-blind ultraviolet detection based on TiO₂ nanoparticles decorated graphene field-effect transistors

Deng

Zhang

et al. 2019

Nanophotonics

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“…After depositing the Si 3 N 4protected layer, the intensity of the D peak rapidly increased; meanwhile, the intensity ratio of the 2D peak to the G peak (I 2D /I G ) decreased immensely from 3.08 to 0.60. Moreover, a slight shift in the G and 2D peaks was also observed [38,39]. The main explanation for the above phenomena is that the introduction of external atoms disrupts the lattice structure of graphene.…”

Section: Physical and Electrical Characteristics Of The N/mems Graphe...mentioning

confidence: 83%

A Novel Crossbeam Structure with Graphene Sensing Element for N/MEMS Mechanical Sensors

Wang

Zhu

et al. 2022

Nanomaterials

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A graphene membrane acts as a highly sensitive element in a nano/micro–electro–mechanical system (N/MEMS) due to its unique physical and chemical properties. Here, a novel crossbeam structure with a graphene varistor protected by Si3N4 is presented for N/MEMS mechanical sensors. It substantially overcomes the poor reliability of previous sensors with suspended graphene and exhibits excellent mechanoelectrical coupling performance, as graphene is placed on the root of the crossbeam. By performing basic mechanical electrical measurements, a preferable gauge factor of ~1.35 is obtained. The sensitivity of the graphene pressure sensor based on the crossbeam structure chip is 33.13 mV/V/MPa in a wide range of 0~20 MPa. Other static specifications, including hysteresis error, nonlinear error, and repeatability error, are 2.0119%, 3.3622%, and 4.0271%, respectively. We conclude that a crossbeam structure with a graphene sensing element can be an application for the N/MEMS mechanical sensor.

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“…Compared with the intensity ratio between the D and G peaks ( I D / I G ratio) in the pure graphene of 0.20, the I D / I G ratio of DTAP–graphene increased to 0.77, indicating the conversion of sp 2 to sp 3 basal carbon atoms, which could be attributed to the formation of the covalent bonding between DTAP and graphene. The I 2D / I G ratio of DTAP–graphene also decreased, which could be caused by the disruption of the lattice structure by introducing extra atoms . Besides, both the 2D and G peaks red-shifted after introducing the DTAP, indicating that covalent coupling of DTAP with graphene could evoke n-type doping of graphene …”

Section: Results and Discussionmentioning

confidence: 99%

Covalent Coupling of Porphyrins with Monolayer Graphene for Low-Voltage Synaptic Transistors

Zhang

Liu

et al. 2022

ACS Appl. Mater. Interfaces

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Synaptic devices emulating biological synapses are a key building component of artificial neural networks. Porphyrins and graphene, as two kinds of emerging electronic materials, have attracted extensive attention in the research of photoelectric devices due to their excellent structural and functional properties. Herein, we present a photonic synaptic transistor based on porphyrin−graphene covalent hybrids utilizing 5,10,15,20-tetrakis (4-aminophenyl)-21H,23H-porphine and monolayer graphene linked through the diazo addition reaction. The photonic synaptic device successfully simulates several essential biological functions, and the synaptic plasticity can be regulated by adjusting the parameters of light spikes and gate voltages of the device. Moreover, learning and memory behaviors under different wavelengths are studied to imitate the learning efficiency of humans in diverse emotional states. It is worth noting that all the synaptic functions can be realized at a low operating voltage of −10 mV, which is much lower than that required by most reported photonic synaptic devices. These results indicate that covalent coupling products of porphyrins with graphene have broad prospects in the construction of synaptic transistors and may arouse new research advances in neuromorphic devices with ultralow operating voltage and low energy consumption.

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Long-term stability of photodetectors based on graphene field-effect transistors encapsulated with Si3N4 layers

Cited by 23 publications

References 45 publications

Solar-blind ultraviolet detection based on TiO₂ nanoparticles decorated graphene field-effect transistors

Solar-blind ultraviolet detection based on TiO₂ nanoparticles decorated graphene field-effect transistors

A Novel Crossbeam Structure with Graphene Sensing Element for N/MEMS Mechanical Sensors

Covalent Coupling of Porphyrins with Monolayer Graphene for Low-Voltage Synaptic Transistors

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Long-term stability of photodetectors based on graphene field-effect transistors encapsulated with Si3N4 layers

Cited by 23 publications

References 45 publications

Solar-blind ultraviolet detection based on TiO2 nanoparticles decorated graphene field-effect transistors

Solar-blind ultraviolet detection based on TiO2 nanoparticles decorated graphene field-effect transistors

A Novel Crossbeam Structure with Graphene Sensing Element for N/MEMS Mechanical Sensors

Covalent Coupling of Porphyrins with Monolayer Graphene for Low-Voltage Synaptic Transistors

Contact Info

Product

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Solar-blind ultraviolet detection based on TiO₂ nanoparticles decorated graphene field-effect transistors

Solar-blind ultraviolet detection based on TiO₂ nanoparticles decorated graphene field-effect transistors