Graphene is an ideal material for highperformance photodetectors because of its superior electronic and optical properties. However, graphene's weak optical absorption limits the photoresponsivity of conventional photodetectors based on planar (two-dimensional or 2D) back-gated graphene field-effect transistors (GFETs). Here, we report a self-rolled-up method to turn 2D buried-gate GFETs into three-dimensional (3D) tubular GFETs. Because the optical field inside the tubular resonant microcavity is enhanced and the light−graphene interaction area is increased, the photoresponsivity of the resulting 3D GFETs is significantly improved. The 3D GFET photodetectors demonstrated room-temperature photodetection at ultraviolet, visible, mid-infrared, and terahertz (THz) regions, with both ultraviolet and visible photoresponsivities of more than 1 A W −1 and photoresponsivity of 0.232 A W −1 at 3.11 THz. The electrical bandwidth of these devices exceeds 1 MHz. This combination of high photoresponsivity, a broad spectral range, and high speed will lead to new opportunities for 3D graphene optoelectronic devices and systems.

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The propagation of subsonic waves supported by laser energy addition is considered. The propagation velocity is modified to account for radiation diffusion by vacuum ultraviolet photons. A simplified two-band radiation transport model is formulated.

The mounting configuration of an optical ring cavity is optimized for vibration insensitivity by finite element analysis. A minimum response to vertical accelerations is found by simulations made for different supporting positions.