2001
DOI: 10.1109/3.903078
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Long wavelength vertical-cavity semiconductor optical amplifiers

Abstract: This paper overviews the properties and possible applications of long wavelength vertical-cavity semiconductor optical amplifiers (VCSOAs). A VCSOA operating in the 1.3-m wavelength region is presented. The device was fabricated using wafer bonding; it was optically pumped and operated in reflection mode. The reflectivity of the VCSOA top mirror was varied in the characterization of the device. Results are presented for 13 and 12 top mirror periods. By reducing the top mirror reflectivity, the amplifier gain, … Show more

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Cited by 47 publications
(29 citation statements)
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“…Wafer-level integration of various advanced high-speed/ high-frequency photonic and electronic devices on a single chip requires technologies to integrate different types of semiconductors in the lateral plane of the wafers. 1 To date, many integration technologies have been developed, [1][2][3][4][5][6][7][8][9][10][11] including regrowth, selective area epitaxy, and repeated selective area direct wafer bonding ͑DWB͒. Over the past ten years, DWB has received considerable attention for integrating mismatched materials where heteroepitaxial growth would compromise device properties through a high density of misfit and threading dislocations.…”
Section: Introductionmentioning
confidence: 99%
“…Wafer-level integration of various advanced high-speed/ high-frequency photonic and electronic devices on a single chip requires technologies to integrate different types of semiconductors in the lateral plane of the wafers. 1 To date, many integration technologies have been developed, [1][2][3][4][5][6][7][8][9][10][11] including regrowth, selective area epitaxy, and repeated selective area direct wafer bonding ͑DWB͒. Over the past ten years, DWB has received considerable attention for integrating mismatched materials where heteroepitaxial growth would compromise device properties through a high density of misfit and threading dislocations.…”
Section: Introductionmentioning
confidence: 99%
“…In the past few years, VCSOAs have drawn increasing research attention [8,9]. As compared to in-plane SOAs, they exhibit several advantages including higher coupling efficiency to optical fibers and lower noise figure due to their circular geometry and small dimensions, respectively.…”
Section: Introductionmentioning
confidence: 99%
“…Moreover, the narrow gain bandwidth eliminates the need for an optical filter after the amplifier making VCSOAs ideal as preamplifiers in receiver modules [1]. Recently, both optically and electrically-pumped long-wavelength VCSOAs have been demonstrated which operate in the telecomrelevant long-wavelength range from 1.3 to 1.5 µm [2]- [5]. However, for many applications, a narrow-band amplifier with a fixed center wavelength is of limited use.…”
Section: Introductionmentioning
confidence: 98%
“…As an extension of fixed-wavelength VCSOAs, we have developed the first widely tunable VCSOAs through the use of an integrated electrostatic actuator [16], [17]. Similar to previous generations of fixed-wavelength VCSOAs [2], MT-VCSOAs operate in reflection mode and are optically pumped. The major difference in the tunable devices is the incorporation of a micromachined membrane structure, which is suspended above an air gap within the top DBR.…”
Section: Introductionmentioning
confidence: 98%