Longitudinal photoeffect in In0.53Ga0.47As p-n junctions

Smart Heterostructures Based on Solid Solution ZnCdHgTe

“…Qualitative analysis performed according to the theories developed in [5][6][7] has manifested complete current mechanism in the both types of the heterostructures. In particular, ballistic mode of the carriers transfer in the heterostructure CdTe/ZnCdHgTe is changed by the tunneling-recombination regime; for the heterostructure ZnTe/ZnCdHgTe we have observed three modes (see (3)): velocity saturation mode turns into ballistic one and this regime is replaced by the strong tunneling (trap-assistant in the space-charge region) of the carriers.…”

Photo-emf in Parabolic Graded-Gap Semiconductors

“…The coordinate sensitivity increases with increasing parameter b and for really achievable values of b becomes comparable with the coordinate sensitivity of photocells based on heterojunction. For example, if b = 5 Â 10 --4 eV/cm 2 , which corresponds to a Ga 1--x Al x As structure of length 2L = 60 mm graded from zero composition at the center to a maximum value x max = 0.3 at the surface, the coordinate sensitivity S = 1.4 Â 10 6 V/W m. Because of its sensitivity the offered structure does not belong to heterojunction photo-cells with a longitudinal photoeffect [9]. In addition, the proposed photocell may have a controllable width D(w) of the coordinate sensitivity.…”