Loss analysis during dead time and thermal study of gallium nitride devices

Zhang, Haiyu; Balog, Robert S.

doi:10.1109/apec.2015.7104432

Cited by 15 publications

(2 citation statements)

References 7 publications

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“…The lack of an integrated body diode also leads to large undershoot voltage which increases reverse conduction loss. To mitigate these issues, precise detection and fast dead-time correction are essential for improving the system performance [10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Gate driver IC for enhancement mode GaN power transistors with senseFET reverse conduction detection circuit

Zhang

Leng

et al. 2019

IET Power Electronics

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Dead-times are necessary in switching output stage to avoid shoot-through current between the high side (HS) and the low side (LS) power transistors. However, excessively long dead-times can lead to unwanted reverse conduction and power loss. Sensing the duration of reverse conductions are especially difficult for high-voltage enhancement mode (e-mode) gallium nitride (GaN) HEMTs due to their fast switching speed. High-precision sensing circuits are required for dead-time correction as the load current changes and to withstand large voltage swings. Traditional CMOS-based sensing circuits (e.g. standard logic gates) are not suitable for GaN-based converters as they can only handle limited voltage ranges. In addition, severe undershoots (up to −4 V) may damage the sensing circuit. Here, a gate driver IC for e-mode GaN power output stages capable of detecting the presence of reverse conduction with a best resolution of 0.66 ns, a dead-time adjustment resolution of 0.33 ns, and with on-chip closed-loop control is presented. In addition, a novel reverse conduction sensing circuit that can accommodate the large voltage swings at the switching node (SW) is also described. (a) Insufficient dead-time causes shoot-through, (b) Excessive dead-time leads to undershoot [14]

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Section: Introductionmentioning

confidence: 99%

Gate driver IC for enhancement mode GaN power transistors with senseFET reverse conduction detection circuit

Zhang

Leng

et al. 2019

IET Power Electronics

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show abstract

“…The absence of an intrinsic body diode in conventional GaN‐HEMT structures has become a frequently discussed issue, e.g. in [4, 5] or [20, 21]. The forward voltage in reverse conduction of a conventional HEMT is coupled to the value of the gate‐source voltage, if the gate‐source voltage is lower than the gate threshold voltage.…”

Section: Introductionmentioning

confidence: 99%

Monolithically integrated power circuits in high‐voltage GaN‐on‐Si heterojunction technology

Reiner

Waltereit

Weiss

et al. 2018

IET Power Electronics

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This study presents monolithically integrated power circuits, fabricated in a high-voltage GaN-on-Si heterojunction technology. Different advanced concepts are presented and compared with solutions found in the literature. High switching transition slew rates are demonstrated by means of a monolithic power circuit with integrated gate driver. A highly linear temperature sensor is integrated in a GaN-high-electron-mobility transistor (HEMT) power device for the 600 V class and onstate resistance of 53 mΩ. An area-efficient HEMT structure with integrated freewheeling diodes is presented. This structure is applied in a monolithic multilevel converter chip, as well as in a 600 V class half-bridge chip. The multilevel chip is integrated by an advanced printed circuit board embedding technology and tested in inverter operation with a mains voltage output of 120 V RMS. The performance of the half-bridge is demonstrated in a synchronous buck converter operation from 400 to 200 V and with a switching frequency of 3 MHz.

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Design considerations for GaN transistor based synchronous rectification

Reusch¹,

Glaser²

2018

2018 IEEE Applied Power Electronics Conference and Exposition (APEC)

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Loss analysis during dead time and thermal study of gallium nitride devices

Cited by 15 publications

References 7 publications

Gate driver IC for enhancement mode GaN power transistors with senseFET reverse conduction detection circuit

Gate driver IC for enhancement mode GaN power transistors with senseFET reverse conduction detection circuit

Monolithically integrated power circuits in high‐voltage GaN‐on‐Si heterojunction technology

Design considerations for GaN transistor based synchronous rectification

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