Monolithically integrated power circuits in high‐voltage GaN‐on‐Si heterojunction technology

Reiner, Richard; Waltereit, Patrick; Weiss, Beatrix; Moench, Stefan; Wespel, M.; Müller, Stefan; Quay, R.; Ambacher, O.

doi:10.1049/iet-pel.2017.0397

Cited by 40 publications

(21 citation statements)

References 42 publications

(53 reference statements)

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“…Fraunhofer IAF has realized an integrated half-bridge converter as shown in Fig. 18, which can be switched at 3 MHz with a input/output of 400/200 V, and a current 1.15 A [92], [93]. In the aspects of GaN integration in companies, Navitas and Dialog have lunched the GaN power IC products.…”

Section: ) Normally-off Hemt Technologymentioning

confidence: 99%

GaN Power Integration for High Frequency and High Efficiency Power Applications: A Review

et al. 2020

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High frequency and high efficiency operation is one of the premier interests in the signal and energy conversion applications. The wide bandgap GaN based devices possess superior properties and have demonstrated exceeding performance than Si or GaAs devices. In order to further exploit the potential of GaN electronics, monolithic power integration is proposed. Firstly, this paper discusses the structure and properties of GaN power devices to explain the choice of lateral integration in the view of GaN power ICs. Then the state-of-the-art performance of GaN power integration in two major application areas is reviewed, which are the microwave power amplification and DC-DC power conversion. The GaN power integration technologies in MMIC platforms are summarized in terms of the gate length, operation frequency and power added efficiency of ICs. On the other hand, the smart GaN power IC platforms have boosted the development of DC-DC power converters. Demonstrations of high frequency (>1 MHz) and high efficiency (>95 %) converters with various kinds of integration technology and topology are reviewed. Lastly novel integration schemes and methods are introduced to stimulate new thoughts on GaN power integration road.

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Section: ) Normally-off Hemt Technologymentioning

confidence: 99%

GaN Power Integration for High Frequency and High Efficiency Power Applications: A Review

et al. 2020

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“…A carbon‐codoped GaN buffer is employed for mismatch‐compensation and buffer isolation. Growth conditions of the buffer are chosen such that both a highly‐insulating buffer as well as a low trap‐density near the active region are achieved . The grown structures consist of an AlN‐nucleation layer, the 1.8 μm‐thick GaN buffer, an Al x Ga 1− x N barrier layer with a content x of 22% Aluminum, and again a thin GaN cap.…”

Section: Intended Comparisonmentioning

confidence: 99%

“…Growth conditions of the buffer are chosen such that both a highly-insulating buffer as well as a low trapdensity near the active region are achieved. [2] The grown structures consist of an AlN-nucleation layer, the 1.8 μm-thick GaN buffer, an Al x Ga 1Àx N barrier layer with a content x of 22% Aluminum, and again a thin GaN cap. For both growth options multiple wafers are grown and forwarded to wafer processing.…”

Section: Growth On Silicon Carbide and Silicon Substratementioning

confidence: 99%

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High‐Power Microwave GaN/AlGaN HEMTs and MMICs on SiC and Silicon Substrates for Modern Radio Communication

Quay

Schwantuschke

Ture

et al. 2018

Physica Status Solidi (a)

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In this paper the recent use AlGaN/GaN high electron mobility transistors (HEMTs) and integrated circuits on both semi‐insulating silicon carbide (SiC) and silicon substrates for radio communication in the microwave and mm‐wave frequency range is described. AlGaN/GaN monolithically microwave integrated circuits (MMICs) are extremely useful for point‐to‐point (P2P)‐links in the backbones of the 4th and upcoming 5th generation of mobile communication networks as power amplifiers, as they provide a great amount of linear power. At the same time GaN‐based power conversion electronics has driven the advancement of the growth of AlGaN/GaN heterostructures on conductive silicon (111) substrates. This again has indirectly led to advancements in the growth capabilities of AlGaN/GaN heterostructures on highly‐resistive (HR) silicon substrates. The paper gives examples of transistors and microstrip transmission‐line‐based MMICs realized in a direct comparison of GaN on s.i. SiC and GaN on HR‐silicon. Constraints and performances for highly‐efficient MMICs are discussed up to mm‐wave frequencies beyond 100 GHz.

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“…The subsequent reduction in device size in combination with the lateral nature of GaN power HEMTs enable monolithic integration of multiple components into compact power ICs with considerably lower parasitic inductance [6], thus allowing much higher frequency operation as well as high power density. These advances open doors to a future where a complete high power converter can be integrated on a single chip [7], [8], by following the same path that logic ICs have taken over the last six decades. However, such converters require orders of magnitude higher currents compared to logic ICs.…”

Section: Introductionmentioning

confidence: 99%

Embedded Microchannel Cooling for High Power-Density GaN-on-Si Power Integrated Circuits

Erp

Kampitsis

Nela

et al. 2020

2020 19th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm)

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In this work, we demonstrate a new thermal management approach for direct cooling of GaN-on-Si power integrated circuits (ICs), in which the Si substrate functions as a microfluidic heat sink, turning Si into a cost-effective, high thermal performance substrate. Flowing coolant through microchannels etched in the backside of the substrate enables a much denser integration of GaN power devices in a single chip. As a proof of concept, an integrated full-wave bridge rectifier (FWBR) was realized based on high-performance tri-anode GaN Schottky barrier diodes (SBDs), together with a novel hybrid printed circuit board (PCB) that provides fluidic and electric connections to the liquid-cooled power IC. A devicelevel heat flux of 417 W/cm 2 was cooled using only 60 mW of pumping power. Compared to conventional air-cooling, the temperature rise was reduced by 98% and the converter output power was increased by 30 times, up to 120 W, by eliminating self-heating degradation. The high cooling efficiency, large heat extraction capabilities and low-cost fabrication process of embedded microchannels on GaN-on-Si, in combination with new PCB-based coolant delivery, can be an enabling technology for the next generation of ultra-high power-density ICs.

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Monolithically integrated power circuits in high‐voltage GaN‐on‐Si heterojunction technology

Cited by 40 publications

References 42 publications

GaN Power Integration for High Frequency and High Efficiency Power Applications: A Review

GaN Power Integration for High Frequency and High Efficiency Power Applications: A Review

High‐Power Microwave GaN/AlGaN HEMTs and MMICs on SiC and Silicon Substrates for Modern Radio Communication

Embedded Microchannel Cooling for High Power-Density GaN-on-Si Power Integrated Circuits

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