2019
DOI: 10.1364/ome.9.000751
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Loss and coupling tuning via heterogeneous integration of MoS2 layers in silicon photonics [Invited]

Abstract: Layered two-dimensional (2D) materials provide a wide range of unique properties as compared to their bulk counterpart, making them ideal for heterogeneous integration for on-chip interconnects. Hence, a detailed understanding of the loss and index change on Si integrated platform is a prerequisite for advances in opto-electronic devices impacting optical communication technology, signal processing, and possibly photonic-based computing. Here, we present an experimental guide to characterize transition metal d… Show more

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Cited by 35 publications
(14 citation statements)
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“…4) [8]. To our knowledge this is the first time that either device is demonstrated in such a platform, however Lipson's Group recently demonstrated strong phase-modulation in an MZI structure [9]. The EOM is realized in a two-terminal in-plane electrode configuration where 2D hBN flakes are used as gate diele ctric, and MoS 2 as the actively gated material ( Fig.…”
Section: Recent Heterogeneous Si-photonic-integrated Modulator Demonsmentioning
confidence: 98%
“…4) [8]. To our knowledge this is the first time that either device is demonstrated in such a platform, however Lipson's Group recently demonstrated strong phase-modulation in an MZI structure [9]. The EOM is realized in a two-terminal in-plane electrode configuration where 2D hBN flakes are used as gate diele ctric, and MoS 2 as the actively gated material ( Fig.…”
Section: Recent Heterogeneous Si-photonic-integrated Modulator Demonsmentioning
confidence: 98%
“…The resonance shift with graphene potential is due to the change in the effective mode index. The resonace shift with graphene coverage and potential is calculated as [27]: thickmathspacenr=)(2πRLg×nw+Lg×nμ2πR normalΔλ=normalΔnr×λrnw where R is the radius of the ring and L g is the graphene coverage length. The effective index for the bare ( n w ) and graphene covered waveguide ( n µ ) at different potential is calculated choosing the TE‐like mode.…”
Section: Analysis Of Loss and Coupling Coefficient Of Graphene Intementioning
confidence: 99%
“…Hence, many research groups have strived for engineering on-chip modulators beyond the solutions offered by heterogeneous integrated photonic-foundries to date. Recent developments of monolithically and CMOS compatible integrated emerging EO or EA materials, such as Indium Tin Oxide (ITO) 15,57 , graphene 14,18,58,59 , quantum-confined structures 60 and TMDs into Si-photonics with specific device configuration aiming to enhance mode overlap allowed energy efficient 61,62 , compact silicon photonic based modulators. The important performance metric for EOMs include high ER (>3dB), low IL (<1dB), modulation speed (>25 GHz), low energy consumption per bit (<10fJ/bit), and compact footprint area (possibly 3D volume).…”
Section: Electro-optic 'Weights' and Nonlinear Activation Function: Mmentioning
confidence: 99%