Low-cost and versatile thermal test chip for power assemblies assessment and thermometric calibration purposes

Jordà, X.; Perpiñà, X.; Vellvehı́, M.; Madrid, F.; Flores, D.; Hidalgo, S.; Millán, José del R.

doi:10.1016/j.applthermaleng.2011.02.008

Cited by 15 publications

(7 citation statements)

References 22 publications

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“…The CUT is emulated by a heater dissipating a sine-wave power signal of frequency f and amplitude Pp, whereas the sensor is replaced by a testing point placed at a distance d from the centre of the heater. The boundary conditions assumed are: (a) isothermal (20ºC) at the bottom surface, which takes into account that this surface will be in contact with a high-conductivity large-area metal; and (b) adiabatic at the lateral and top surfaces, which considers that the heat will be mainly transferred by conduction through the silicon substrate towards the bottom[23]. The frequencies simulated are from 100 Hz to 200 kHz and, hence, the values of δp calculated by (2) are from 12 µm to 535 µm.…”

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confidence: 99%

MOSFET dynamic thermal sensor for IC testing applications

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Perpiñà

Barajas

et al. 2016

Sensors and Actuators A: Physical

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This paper analyses how a single metal-oxide-semiconductor field-effect transistor (MOSFET) can be employed as a thermal sensor to measure on-chip dynamic thermal signals caused by a power-dissipating circuit under test (CUT). The measurement is subjected to two low-pass filters (LPF). The first LPF depends on the thermal properties of the heat-conduction medium (i.e. silicon) and the CUT-sensor distance, whereas the second depends on the electrical properties of the sensing circuit such as the bias current and the dimensions of the MOSFET sensor. This is evaluated along the paper through theoretical models, simulations, and experimental data resulting from a chip fabricated in 0.35 mu m CMOS technology. Finally, the proposed thermal sensor and the knowledge extracted from this paper are applied to estimate the linearity of a radio-frequency (RF) amplifier. (C) 2016 Elsevier B.V. All rights reserved.Peer ReviewedPostprint (author's final draft

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confidence: 99%

MOSFET dynamic thermal sensor for IC testing applications

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Perpiñà

Barajas

et al. 2016

Sensors and Actuators A: Physical

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“…It was assumed a silicon substrate with a thickness of 725 µm and without a package, which agrees with that tested later in the experimentation. The boundary conditions considered were [9]: (a) isothermal (20ºC) at the bottom surface, which takes into account that this will be in contact with a high-conductivity large-area metal; and (b) adiabatic at the lateral and top surfaces, which considers that the heat will be mainly transferred by conduction through the silicon substrate towards the bottom [22].…”

Section: Thermal Simulationsmentioning

confidence: 99%

Single-MOSFET DC thermal sensor for RF-amplifier central frequency extraction

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Perpiñà

Barajas

et al. 2017

Sensors and Actuators A: Physical

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A DC thermal sensor based on a single metal-oxide-semiconductor field-effect transistor (MOSFET) is proposed to extract high-frequency electrical features of embedded circuits. The MOSFET sensor is monolithically integrated with the circuit under test (CUT) and then monitors by thermal means the DC power dissipated by the CUT, which carries high-frequency electrical information. After explaining the theory behind this testing approach, the paper demonstrates the feasibility of the proposed MOSFET sensor through simulations and experiments. These are carried out using a radio-frequency (RF) power amplifier as a CUT and thermally extracting its central frequency (440 MHz). The MOSFET sensor results are assessed using an infrared camera as a reference. The main advantage of the proposed sensing method is that the impact on the integrated circuit (IC) layout area is minimum, which is crucial when testing RF-ICs. Moreover, in comparison with previous works, the cost and complexity of the required instrumentation is lower.

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“…The basic principle lies on the integration of a temperature sensor on top surface of a power diode [17] [18]. Temperature sensor uses the principle of variation of the electric resistivity of certain materials in respect to temperature.…”

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confidence: 99%