Low-cost fully integrated BiCMOS transceiver for pulsed 24-GHz automotive radar sensors

Moquillon, L.; Garcia, P.; Pruvost, Sébastien; Tual, Stephane Le; Marchetti, Mauro; Chabert, Laurent; Bertholet, N.; Scuderi, A.; Scaccianoce, S.; Serratore, A.; Piazzese, N.; Dehos, Cédric; Morche, Dominique

doi:10.1109/cicc.2008.4672124

Cited by 14 publications

(6 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The development of silicon-based IC technologies, allowing the implementation of highly integrated and cost-effective radio designs, has led to recent research activities in the field of automobile radar. Over the last few years, industry and academics have investigated 24-GHz short-range car radar [2][3][4][5][6]. In reality, short-range radar sensors (SRRS) operating at 24-GHz, were previously used in the commercial automobile sector [3].…”

Section: Introductionmentioning

confidence: 99%

A 65 nm Duplex Transconductance Path Up-Conversion Mixer for 24 GHz Automotive Short-Range Radar Sensor Applications

Delwar

Siddique

Biswal

et al. 2022

Sensors

View full text Add to dashboard Cite

A 24 GHz highly-linear upconversion mixer, based on a duplex transconductance path (DTP), is proposed for automotive short-range radar sensor applications using the 65-nm CMOS process. A mixer with an enhanced transconductance stage consisting of a DTP is presented to improve linearity. The main transconductance path (MTP) of the DTP includes a common source (CS) amplifier, while the secondary transconductance path (STP) of the DTP is implemented as an improved cross-quad transconductor (ICQT). Two inductors with a bypass capacitor are connected at the common nodes of the transconductance stage and switching stage of the mixer, which acts as a resonator and helps to improve the gain and isolation of the designed mixer. According to the measured results, at 24 GHz the proposed mixer shows that the linearity of output 1-dB compression point (OP1dB) is 3.9 dBm. And the input 1-dB compression point (IP1dB) is 0.9 dBm. Moreover, a maximum conversion gain (CG) of 2.49 dB and a noise figure (NF) of 3.9 dB is achieved in the designed mixer. When the supply voltage is 1.2 V, the power dissipation of the mixer is 3.24 mW. The mixer chip occupies an area of 0.42 mm2.

show abstract

Section: Introductionmentioning

confidence: 99%

A 65 nm Duplex Transconductance Path Up-Conversion Mixer for 24 GHz Automotive Short-Range Radar Sensor Applications

Delwar

Siddique

Biswal

et al. 2022

Sensors

View full text Add to dashboard Cite

show abstract

“…This article focuses on (SiGe Bi)CMOS silicon circuits operating at frequencies below 100 GHz (and above 2.5 GHz) where most of the high-frequency applications are proposed. If demonstrators of fully integrated transceivers have been proposed in the literature [10,11] even above 100 GHz [12], BiCMOS technologies can hardly compete with GaAs (or InP and also GaN) technologies for high-power or low-level amplification. However, the benefit of mixed-signal makes this technology a first choice for frequency conversion, by considering a fully integrated chip with local oscillator (PLL or DDFS) with the mixer, even to the baseband signal module (Figure 1, depicts an architecture of a zero-IF demodulation).…”

Section: Introductionmentioning

confidence: 99%

Evolution Trends and Paradigms of Low Noise Frequency Synthesis and Signal Conversion Using Silicon Technologies

2022

View full text Add to dashboard Cite

Silicon technologies for HF applications have been proven for more than two decades, and technologies have greatly evolved. Whether CMOS or BiCMOS technologies, the unique combination of radio frequency, baseband, and digital functions allow a very high level of integration. While it is possible to achieve fully integrated transceivers, the major advantages of these silicon technologies lie mainly in their unparalleled performance in the field of frequency synthesis and frequency conversion. We propose in this paper a review of the major results obtained on these RF components since the beginning of the 2000s, also considering the impact of the technology node. The back-end of line (BEOL) process on which depends the quality of microwave monolithic integrated circuits (MMICs) is briefly presented in the introductory part. If circuit performances are tightly bound to the active devices (i.e., the heterojunction bipolar transistor SiGe HBT or CMOS transistor), passive elements (i.e., quality factor of inductors and varactors, losses of transmission, or interconnection lines) as well as the definition of the substrate also play a major role. The core of the article is oriented toward the noise of synthesized signals and frequency conversion. Frequency synthesis is presented through the analog design of a voltage-controlled oscillator (VCO) or through the direct digital frequency synthesis (DDFS), for which respective figures of merit are presented and discussed in a second section. The spectral purity of the oscillators being decisive in the definition of the throughput of a link is approached through the comparison of different figures of merit (FoM) for a set of circuits achievements over the selected period. If the realization of free oscillators is closely bound to the phase-locked loop (PLL)-type control loop for VCOs, the DDFS solution provides more direct and more flexible alternative at first sight. Therefore, these two solutions are analyzed collectively. Finally, the oscillator integrated in the transmitter or receiver supplies the needed LO (local oscillator) power to the frequency mixer in the frequency conversion module: henceforth, the third part of this study focuses on high-frequency mixer realizations. We thus consider this LO power in some advanced figure of merit mentioned in the second section. The design trade-off of the mixer is presented in an approach combining LO (conversion gain, channel isolation, and phase noise) and RF (HF noise figure and channel isolation) constraints. The final section provides a summary of the results and trends mentioned in the paper.

show abstract

“…In addition, K-band radar transceiver can be used for various applications in security and industry. K-band radar transceiver circuits have been already reported using SiGe technologies [3,4]. However, considering the level of integration, power consumption, manufacturing cost for mass production, the CMOS technology seems to be more competitive than other technologies for 24-GHz ISM band applications because successful design results have been reported using matured 0.13 µm technology [5,6].…”

Section: Introductionmentioning

confidence: 99%

A Fully-Integrated Low Power K-band Radar Transceiver in 130nm CMOS Technology

Kim¹,

Cui²,

Kim³

et al. 2012

JSTS:Journal of Semiconductor Technology and Science

View full text Add to dashboard Cite

Abstract-A fully-integrated low power K-band radar transceiver in 130 nm CMOS process is presented. It consists of a low-noise amplifier (LNA), a downconversion mixer, a power amplifier (PA), and a frequency synthesizer with injection locked buffer for driving mixer and PA. The receiver front-end provides a conversion gain of 19 dB. The LNA achieves a power gain of 15 dB and noise figure of 5.4 dB, and the PA has an output power of 9 dBm. The phase noise of VCO is -90 dBc/Hz at 1-MHz offset. The total dc power dissipation of the transceiver is 142 mW and the size of the chip is only 1.2 × 1.4 mm 2 .

show abstract

Low-cost fully integrated BiCMOS transceiver for pulsed 24-GHz automotive radar sensors

Cited by 14 publications

References 8 publications

A 65 nm Duplex Transconductance Path Up-Conversion Mixer for 24 GHz Automotive Short-Range Radar Sensor Applications

A 65 nm Duplex Transconductance Path Up-Conversion Mixer for 24 GHz Automotive Short-Range Radar Sensor Applications

Evolution Trends and Paradigms of Low Noise Frequency Synthesis and Signal Conversion Using Silicon Technologies

A Fully-Integrated Low Power K-band Radar Transceiver in 130nm CMOS Technology

Contact Info

Product

Resources

About