Low cost, room temperature debondable spin-on temporary bonding solution: A key enabler for 2.5D/3D IC packaging

John, Ranjith; Meynen, H.; Sheng, Wang; Fu, Ping; Yeakle, Craig; Kim, Sang Wook W.; Larson, Lyndon; Sullivan, Scott M.

doi:10.1109/ectc.2013.6575558

Cited by 17 publications

(8 citation statements)

References 8 publications

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“…Dow Corning reported earlier the performance achieved both with blank and bumped wafers, and the thermal and chemical compatibility of Dow Corning temporary bonding and debonding solutions with common 3D processing steps has also been investigated and reported elsewhere by R.S.E. John et al [1]. …”

Section: A Process Setup On Silicon Blank Wafersmentioning

confidence: 94%

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Cost-effective temporary bonding and debonding material solution towards high-volume manufacturing 2.5D/3D through-silicon via integrated circuits

Civale¹,

Meynen²,

John

et al. 2013

2013 IEEE International 3D Systems Integration Conference (3DIC)

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Dow Corning developed a silicone-based room temperature temporary bonding and mechanical debonding solution to overcome the current limitations of existing materials and processes for next generation of 2.5D & 3D IC packages; The material properties make possible the use of a simple process sequence which includes material spin coating, room temperature bonding and mechanical debonding. Whereas the Dow Corning bi-layer approach has been reported recently [1], this study focuses on bonding and debonding performance obtained with SUSS MicroTec automated bonding and debonding equipment and for adhesive layer thickness in the range of 100 m. The results reported in this study, particularly the good process control and ability to debond with a low force (<30 N) while keeping the overall sequence short and thus cost-effective, make the Dow Corning temporary bonding and debonding approach a versatile solution towards the validation of the TSV technology for a wide range of 2.5D and 3D stacked ICs applications.

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Section: A Process Setup On Silicon Blank Wafersmentioning

confidence: 94%

“…The Dow Corning approach has been reported earlier [1] and the general sequence can be seen in Fig. 1.…”

Section: Imentioning

confidence: 97%

Cost-effective temporary bonding and debonding material solution towards high-volume manufacturing 2.5D/3D through-silicon via integrated circuits

Civale¹,

Meynen²,

John

et al. 2013

2013 IEEE International 3D Systems Integration Conference (3DIC)

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“…Such method necessary implies the use of glass as carrier substrate.  Pure mechanical debond where mechanical force is applied to an interfacial (release) layer, allowing separation of the carrier from the thin wafer [6]. Due to their intrinsic lower wafer breakage risks the two latter debond methods have been intensively studied in the past couple of years.…”

Section: Common Thin Wafer Debonding Methodsmentioning

confidence: 99%

Demonstration of a novel low cost single material temporary bond solution for high topography substrates based on a mechanical wafer debonding and innovative adhesive removal

Phommahaxay

Nakamura²,

Jourdain

et al. 2015

2015 IEEE 65th Electronic Components and Technology Conference (ECTC)

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Among the technological developments pushed by the emergence of 3D-ICs, wafer thinning has become a key element in device processing over the past years. As technology matures, more emphasis is now being put on the overall cost of ownership, which is still regarded as a refraining element for technology adoption. Therefore novel temporary bond concepts and materials are being explored to further bring down the process complexity and cost.

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“…The laser release system has an advantage because of its low de-bonding temperature, low mechanical stress, and high throughput characteristics. [8][9][10][11] In addition, the broad process window of the laser release system is better for the FO-WLP application compared with the other conventional de-bonding systems.…”

Section: Laser Release Technologymentioning

confidence: 99%

UV Laser Releasable Temporary Bonding Materials for FO-WLP

Mizuno¹,

Ishii²,

Kato³

et al. 2018

Transactions of The Japan Institute of Electronics Packaging

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Temporary bonding/de-bonding (TBDB) technology in a FOWLP process is required to adapt to a low temperature process because of the potential for damage in handling the thin molded compound embedding dies. We have developed laser releasable TBDB materials for low temperature bonding processes that enable UV laser release with high throughput and low thermal/mechanical stress. The developed TBDB materials consist of two layers, an adhesive layer and a release layer. The appropriate wafer bonding temperature can be controlled by the molecular weight of the polymer which is the main component of the adhesive material. Good bonding property has been seen, even at 160°C by adopting the lowest molecular weight polymer. On the other hand, the release layer material exhibits excellent stability that allows for fabrication of RDLs directly onto the layer to give a stacked structure in the Chip-last (RDL-first) method. The laser energies preferred for wafer release processes are 130 mJ/cm 2 for a 308 nm excimer laser and 190 mJ/cm 2 for a 355 nm YAG. These materials will be promising for advancements of FO-WLP applications.

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Low cost, room temperature debondable spin-on temporary bonding solution: A key enabler for 2.5D/3D IC packaging

Cited by 17 publications

References 8 publications

Cost-effective temporary bonding and debonding material solution towards high-volume manufacturing 2.5D/3D through-silicon via integrated circuits

Cost-effective temporary bonding and debonding material solution towards high-volume manufacturing 2.5D/3D through-silicon via integrated circuits

Demonstration of a novel low cost single material temporary bond solution for high topography substrates based on a mechanical wafer debonding and innovative adhesive removal

UV Laser Releasable Temporary Bonding Materials for FO-WLP

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