Low-dimensional electron transport properties in InAs/AlGaSb mesoscopic structures

Inoue, M.; Sugihara, T.; Maemoto, Toshihiko; Sasa, Shigehiko; Dobashi, H.; Izumiya, Satoshi

doi:10.1006/spmi.1996.0170

Cited by 14 publications

(1 citation statement)

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“…The ballistic rectifiers were studied in the nonlinear regime, where ballistic electrons tend to travel in straight rather than curved paths. InAs/AlGaSb heterostructures offer promising new device applications due both to ballistic electron transport [8] and to the unique band alignment of this Type-II staggered and broken gap system. Low-dimensional electrons in InAs/AlGaSb heterostructures are attracting in the interests of the low effective mass, higher conduction band off-set and subsequent strong confinement in the heterostructure.…”

Section: Introductionmentioning

confidence: 99%

Electron transport in InAs/AlGaSb ballistic rectifiers

Maemoto

Koyama

Furukawa

et al. 2006

J. Phys.: Conf. Ser.

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Nonlinear transport properties of a ballistic rectifier fabricated from InAs/AlGaSb heterostructures are reported. The operation of the ballistic rectifier is based on the guidance of carriers by a square anti-dot structure. The structure was defined by electron beam lithography and wet chemical etching. The DC characteristics and magneto-transport properties of the ballistic rectifier have been measured at 77 K and 4.2 K. Rectification effects relying on the ballistic transport were observed. From the four-terminal resistance measured at low magnetic fields, we also observed magneto-resistance fluctuations corresponding to the electron trajectories and symmetry-breaking electron scattering, which are influenced by the magnetic field strength.

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Section: Introductionmentioning

confidence: 99%

Electron transport in InAs/AlGaSb ballistic rectifiers

Maemoto

Koyama

Furukawa

et al. 2006

J. Phys.: Conf. Ser.

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High Speed Quasi-One-Dimensional Electron Transport in InAs/AlGaSb Mesoscopic Devices

Maemoto

Yamamoto

Konami

et al. 1997

phys. stat. sol. (b)

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Ballistic transport and Andreev resonances in Nb/In superconducting contacts to InAs and LTG-GaAs

Rizk

Yulius

Yoo

et al. 1999

Superlattices and Microstructures

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We have formed superconducting contacts in which Cooper pairs incident from a thick In layer must move through a thin Nb layer to reach a semiconductor, either InAs or low temperature grown (LTG) GaAs. The effect of pair tunneling through the Nb layer can be seen by varying the temperature through the critical temperature of In. Several of the In/Nb-InAs devices display a peak in the differential conductance near zero-bias voltage, which is strong evidence of ballistic transport across the NS interface. The differential conductance of the In/Nb-(LTG) GaAs materials system displays conductance resonances of McMillan-Rowell type. These resonant levels exist within a band of conducting states inside the energy gap, formed from excess As incorporation into the (LTG) GaAs during growth. Electrons propagating in this band of states multiply reflect between the superconductor and a potential barrier in the GaAs conduction band to form the conductance resonances. A scattering state theory of the differential conductance, including Andreev reflections from the composite In/Nb contact, accounts for most qualitative features in the data.

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Low-dimensional electron transport properties in InAs/AlGaSb mesoscopic structures

Cited by 14 publications

References 0 publications

Electron transport in InAs/AlGaSb ballistic rectifiers

Electron transport in InAs/AlGaSb ballistic rectifiers

High Speed Quasi-One-Dimensional Electron Transport in InAs/AlGaSb Mesoscopic Devices

Ballistic transport and Andreev resonances in Nb/In superconducting contacts to InAs and LTG-GaAs

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