Low-divergence-angle 808-nm GaAlAs/GaAs laser diode using an asymmetric-cladding structure

Xu, Zhilu; Gao, Wei; Siskavich, Brad; Nelson, A. H.; Cheng, Lisen; Luo, Kui; Kim, Hyosang; Wang, Zhiping; Chin, A. K.

doi:10.1117/12.528329

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2005

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“…The nearly Gaussian shapes of the profiles as revealed by the fits greatly simplify the coupling of the laser emission into optical systems. This is in contrast to other approaches (compare, for example, [13]), where the far field often has substantial side lobes or shoulders at larger angles.…”

Section: Resultscontrasting

confidence: 66%

High-power 808 nm lasers with a super-large optical cavity

Knauer

Erbert

Staske

et al. 2005

Semicond. Sci. Technol.

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We present a detailed design and experimental study of diode laser structures emitting at 808 nm based on the combination of a GaAsP quantum well with well-established AlGaAs waveguide structures. By increasing the thickness of the confinement layers of the laser structure, its vertical far field divergence is reduced down to 15 • with only a small increase of the threshold current and small loss of efficiency. 200 µm aperture 'broad area' devices achieve at a heat sink temperature of 25 • C a continuous wave (CW) output power of more than 15 W with a wall-plug efficiency of 50% with a vertical far field divergence of 18 • . This output power illustrates the excellent high-power performance by using super-large optical-cavity structures with improved beam characteristics in comparison to the conventional broad waveguide lasers.

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Section: Resultscontrasting

confidence: 66%