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We report results on single-mode, InAlGaAs/AlGaAs/GaAs, 915 nm, laser-diodes operating reliably at 300 mW. The graded-index, separate-confinement, strained, single quantum-well structure was grown by metal-organic chemicalvapor deposition. Carbon, rather than zinc, was used as the p-doping source to reduce internal loss and potential reliability issues due to the thermal diffusion of zinc. A threshold current density of 133 A/cm 2 , internal loss of 2.0 cm -1 and internal quantum efficiency of 93% were achieved. For 1500 µm long ridge waveguide lasers, a record single-mode output-power of 500mW was obtained for devices mounted epitaxial-side up onto AlN submounts using eutectic Au 80 Sn 20 solder. Ten burned-in devices have now been aged at a constant current of 450 mA (~ 300 mW) at 85 ºC for more than 1500 hours without measurable degradation.

We present a single-mode, 808 nm, AlInGaAs/AlGaAs/GaAs, strained, quantum-well laser with a recordlow, vertical divergence-angle of 12 degrees and high slope-efficiency of 1.0 W/A. Epitaxial-up mounted devices have operated with no measurable degradation at 150 mW, 50 °C for 3500 hours.