Low‐Frequency Current Fluctuations in Quasi‐1D (TaSe₄)₂I Weyl Semimetal Nanoribbons

Abstract

quasi-1D material is defined as a Weyl semimetal with Weyl points located above and below the Fermi level, forming pairs with the opposite chiral charge. At temperatures below the Peierls transition temperature T P = 248-263 K, (TaSe 4 ) 2 I reveals the charge-density-wave (CDW) phase. [4,[8][9][10][11][12][13] The quantum CDW phase consists of a periodic modulation of the electronic charge density accompanied by a periodic distortion of the atomic lattice. [14][15][16][17][18][19] It has been suggested that (TaSe 4 ) 2 I reveals a correlated topological phase, which arises from the formation of CDW in a Weyl semimetal. [11,12] This quasi-1D quantum material represents an interesting avenue for exploring the interplay of correlations and topology, as well as being an exciting system for examining new functionalities and electronic applications. [17,20] There are interesting applied physics and electronic materials aspects in the research of topological semimetals. The resistance and current density bottlenecks in downscaled metal interconnect motivate the search for new materials for the back end of the line (BEOL) interconnect applications. [21,22] When the interconnect linewidth scales below the electron mean free path, its resistivity increases in a power-law function due to Low-frequency current fluctuations, i.e., electronic noise, in quasi-1D (TaSe 4 ) 2 I Weyl semimetal nanoribbons are discussed. It is found that the noise spectral density is of the 1/f type and scales with the square of the current, S I ~ I 2 (f is the frequency). The noise spectral density increases by almost an order of magnitude and develops Lorentzian features near the temperature T ≈ 225 K. These spectral changes are attributed to the charge-density-wave phase transition even though the temperature of the noise maximum deviates from the reported Peierls transition temperature in bulk (TaSe 4 ) 2 I crystals. The noise level, normalized by the channel area, in these Weyl semimetal nanoribbons is surprisingly low, ≈10 −9 µm 2 Hz −1 at f = 10 Hz, when measured below and above the Peierls transition temperature. The obtained results shed light on the specifics of electron transport in quasi-1D topological Weyl semimetals and can be important for their proposed applications as downscaled interconnects.

Quantum Composites with Charge‐Density‐Wave Fillers

“…A natural extension of the concept of quantum composites with CDW fillers would be the utilization of the 1D van der Waals quantum materials that reveal CDW and topological phenomena. [7,11,[76][77][78] Additional challenges that have to be dealt with in this research direction would include uniform dispersion of the high aspect ratio quasi-1D fillers and control of the polytypes of the synthesized materials; relevant materials, such as NbS 3 , reveal polymorphism. [11,78] However, if implemented one can possibly develop composites with electrical and optical properties not achievable by other means.…”

Quasi-One-Dimensional ZrS3 Nanoflakes for Broadband and Polarized Photodetection with High Tuning Flexibility

“…Quasi-one-dimensional (Q1D) transition metal trichalcogenides (MX 3 , where M is a transition metal and X is a chalcogen) belong to less explored anisotropic layered materials. Their unique physical properties such as charge density waves and superconducting phase transitions have been extensively investigated, − while the device applications such as field-effect transistors (FETs) and broadband photodetectors have also been demonstrated. − As an important member of the MX 3 family, bulk zirconium trisulfide (ZrS 3 ) exhibits an indirect band gap of ∼2 eV . The exhibited optical anisotropy is also reported to be stronger than the well-known anisotropic 2D materials (e.g., BP and ReS 2 ), , thus resulting in anisotropic Raman scattering behaviors as well as modulations in the optoelectrical properties of the corresponding vdW heterostructures. , ZrS 3 photodetectors with high detectivity and polarized photoresponse have already been reported, , exhibiting thickness dependent anisotropic ratios.…”

The Influence of Dimensionality on the Charge‐Density‐Wave Transition and its Application on Mid‐Infrared Photodetection

“…Furthermore, it was reported for 1D CDW materials, pseudogap related semiconducting behavior instead of metallic ground state exists above CDW transition temperature, [ 12 ] which hints for a possible lower dark current in the photodetection based on 1D CDW transition. Recently, low‐noise current level characteristics at dark state was observed in quasi‐1D (TaSe 4 ) 2 I, [ 13 ] which would be beneficial for obtaining high signal‐to‐noise ratio in photodetection application. Furthermore, high performance photodetection up to 28 A W −1 at room temperature has been reported in (TaSe 4 ) 2 I nanowire, [ 14 ] but still limited in visible to near‐infrared region.…”