Low-frequency current pulses in low-conductivity GaAs

Hayashi, Takao; Takao, Iwao

doi:10.1109/t-ed.1972.17424

IEEE Trans. Electron Devices

1972

DOI: 10.1109/t-ed.1972.17424

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Low-frequency current pulses in low-conductivity GaAs

Takao Hayashi

Iwao Takao

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Cited by 3 publications

References 11 publications

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Current oscillations in high-resistivity silicon with deep levels

Kähler¹,

Kassing²

1972

Phys. Stat. Sol. (a)

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Investigations of current oscillations observed in high resistivity Au‐compensated n+–i–in+ and p+–p+ silicon samples are reported. The specific resistivities of the i regions are 20 k Ω cm and about 105 Ωcm at the n‐type Si and 14 k Ωcm at the p‐type silicon, respectively. The dc I–U‐characteristics and the contact preparation justify the assumption that single injection SCLC are attributable to the current oscillations and that double injection is negligible. The waveforms of the oscillations are not sinusoidal in general. The frequencies are in the range of 100 kHz at the 105 Ωcm material. In the 20 k Ω cm samples a pulse like waveform is typical for the current instabilities and the repetition rate of the pulses is about 10 kHz. Measurements using voltage pulses show that current oscillations are initiated a certain delay time after applying the voltage pulse, if a critical trap occupation is reached.

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Current oscillations in high-resistivity silicon with deep levels

Kähler¹,

Kassing²

1972

Phys. Stat. Sol. (a)

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Generation of coherent current pulses and delayed switching in relaxation GaAs p+-iν-n diodes

Okushi¹

1977

Journal of Applied Physics

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In GaAs p+-ν-n diodes prepared from high-resistivity Cr-doped GaAs, generation of coherent current pulses (CCP) has been observed in the forward bias region Vth?V<Vsw and delayed switching in the region V≳Vsw, where Vth is a threshold voltage for the CCP and Vsw is a threshold voltage for the switching. Coexistence of multiple components of the CCP with different interpulse times and pulse heights has been observed, which indicates that the CCP is caused by the periodic formation and annihilation of the filamentary current path. A double-pulse experiment of the delayed switching has been performed using first and second identical pulses with varying pulse-separation time. For pulse heights slightly larger than Vsw, the delay time of the second pulse (td2) is larger than that of the first pulse (td1). Experimental results show that this peculiar relation td2≳td1 is due to an electronic process. These new nonlinear transport phenomena are closely related to each other. A model based on the concept of the relaxation semiconductor is proposed, taking into account the relationship between the dielectric relaxation time and the diffusion length lifetime in a transient state of the system involving two types of defect centers. Numerical estimations based on the model agree with the experimental values.

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Low-frequency current pulses in a semiinsulating GaAs device

Mimura

Suzuki

Ohkawa

et al. 1976

Applied Physics Letters

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Coherent low-frequency current pulses (3×10−3–2×10−2 Hz at room temperature) have been observed in semiinsulating (SI) GaAs with an epitaxial n-GaAs film (n) as a cathode and an evaporated metal as an anode. By measuring the potential drop across the n-SI junction, very high electric fields have been found near the junction. The periodic creation and annihilation of a space-charge barrier due to deep-lying electron traps localized at the n-SI junction qualitatively explains the prominent features of the phenomenon.

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Low-frequency current pulses in low-conductivity GaAs

Cited by 3 publications

References 11 publications

Current oscillations in high-resistivity silicon with deep levels

Current oscillations in high-resistivity silicon with deep levels

Generation of coherent current pulses and delayed switching in relaxation GaAs p+-iν-n diodes

Low-frequency current pulses in a semiinsulating GaAs device

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