Low-Frequency Noise Characteristics in Strained-Si nMOSFETs

Wang, Yen Ping; Wu, Sean; Chang, Shoou Jinn

doi:10.1109/led.2006.887632

Cited by 14 publications

(5 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…On the other hand, the fabrication process or device architectures in strained-Si device have a strong impact on 1 / f noise performance, [8][9][10][11][12] it is difficult to observe intrinsic stress effect on low-frequency noise and conclude on the accurate 1 / f noise fluctuation model. In this paper, we proposed an efficient method to evaluate the intrinsic strain effect which use same device process and different channel length on one chip.…”

Section: Impact Of Stress-memorization Technique Induced-tensile Stramentioning

confidence: 99%

Impact of stress-memorization technique induced-tensile strain on low frequency noise in n-channel metal-oxide-semiconductor transistors

Kuo

Chang

et al. 2010

Applied Physics Letters

View full text Add to dashboard Cite

Articles you may be interested inImpact of SiGe source/drain induced-compressive strain on low frequency noise in high-k/metal gate pchannel metal-oxide-semiconductor transistors Hot carrier effect on gate-induced drain leakage current in high-k/metal gate n-channel metal-oxidesemiconductor field-effect transistors Appl. Phys. Lett. 99, 012106 (2011); 10.1063/1.3608241 Impact of static and dynamic stress on threshold voltage instability in high-k/metal gate n-channel metaloxide-semiconductor field-effect transistors Appl. Phys. Lett. 98, 092112 (2011); 10.1063/1.3560463 Influence of the Ge concentration in the virtual substrate on the low frequency noise in strained-Si surface nchannel metal-oxide-semiconductor field-effect transistors J. Appl. Phys. 103, 044501 (2008); 10.1063/1.2844553Random telegraph signals and low-frequency noise in n-metal-oxide-semiconductor field-effect transistors with ultranarrow channels

show abstract

Section: Impact Of Stress-memorization Technique Induced-tensile Stramentioning

confidence: 99%

Impact of stress-memorization technique induced-tensile strain on low frequency noise in n-channel metal-oxide-semiconductor transistors

Kuo

Chang

et al. 2010

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…However, the carrier number fluctuation cannot accurately describe the 1/f noise mechanism for strained-Si nMOSFETs without CMP. A previous report [8] has proposed that the origin of 1/f noise commonly found in strained devices needs to be considered within the unified fluctuation model which includes number fluctuations and correlated mobility fluctuations. This compact noise model is expressed by the following equation [10]:…”

Section: Resultsmentioning

confidence: 99%

“…Due to the inherent misfit dislocation in the strained-Si/SiGe structure, the 1/f noise is supposed to serve as a monitor of the interface properties and oxide traps. LF noise characteristics in strained-Si nMOSFETs have been reported and shown significant dependence on gate oxide formation [6], the growth conditions for strained-relaxed buffer (SRB) [7], strained-Si thickness and Ge concentration of SRB [8]. However, the associated behavior is assessed in terms of the carrier number or mobility fluctuations.…”

Section: Methodsmentioning

confidence: 99%

Low-frequency noise of strained-Si nMOSFETs fabricated on a chemical–mechanical-polished SiGe virtual substrate

Lin

Chang

et al. 2008

Semicond. Sci. Technol.

View full text Add to dashboard Cite

The low-frequency noise characteristics in strained-Si nMOSFETs, utilizing the chemical-mechanical-polishing (CMP) treated SiGe virtual substrate have been investigated and compared with the results obtained on strained-Si counterparts without CMP technology. Additional 10.6% mobility improvement and four times lower 1/f noise over 1-100 Hz was obtained for strained-Si devices with the CMP process, indicting that the CMP process provides a smoother surface for the strained-Si/SiGe structure. Moreover, experimental results show that carrier number fluctuation, and not the unified model, is more suitable to interpret the mechanism of 1/f noise in strained-Si devices with the CMP process.

show abstract

“…The impact of SRB on strained Si MOSFETs was reported in [10], which compares the noise performance of strained Si MOSFETs with different Ge content in SRB (15 %, 20 % and 28 %). This work confirms a clear trend in noise magnitude with respect to Ge concentration in the SRB: the higher the Ge concentration, the higher the level of the low frequency noise.…”

Section: Defect Characterisationmentioning

confidence: 99%

Noise performance in strained Si heterojunction bipolar transistors

Fjer

Persson

Escobedo-Cousin

et al. 2011

2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)

View full text Add to dashboard Cite

In this paper, a study of the noise performance of strained Si Heterojunction Bipolar Transistors (sSi HBTs) is presented. This novel device exhibits low noise levels compared with Si Bipolar Junction Transistors (Si BJTs) and SiGe Heterojunction Bipolar Transistors (SiGe HBTs) for the same collector current, which can lower the noise in circuit applications. This performance benefit originates from the high current gain in sSi HBTs. However, the latter shows a higher noise level compared with the other devices at fixed base current. This is due to the presence of defects that are caused by the integration of a strained relaxed buffer used in the fabrication of sSi HBTs. The relationship between low frequency noise and defects has also been demonstrated using material characterisation.

show abstract

Low-Frequency Noise Characteristics in Strained-Si nMOSFETs

Cited by 14 publications

References 8 publications

Impact of stress-memorization technique induced-tensile strain on low frequency noise in n-channel metal-oxide-semiconductor transistors

Impact of stress-memorization technique induced-tensile strain on low frequency noise in n-channel metal-oxide-semiconductor transistors

Low-frequency noise of strained-Si nMOSFETs fabricated on a chemical–mechanical-polished SiGe virtual substrate

Noise performance in strained Si heterojunction bipolar transistors

Contact Info

Product

Resources

About