Low-Frequency Noise Characteristics of In-Doped ZnO Ultraviolet Photodetectors

Chang, Shoou‐Jinn; Duan, Bi-Gui; Hsiao, C. H.; Young, Sheng-Joue; Wang, Bo-Chin; Kao, Tsung-Hsien; Tsai, Kai-Shiang; Wu, San-Lein

doi:10.1109/lpt.2013.2280719

Cited by 31 publications

(9 citation statements)

References 17 publications

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“…The properties of doped ZnO 1D‐NSs have been widely investigated both experimentally and theoretically. In this section, we will review recent articles about doped ZnO 1D‐NS photodetectors, and provid an overview of the optical properties and measured results which are briefly summarized in Table 3 . The performance of doped ZnO 1D‐NS photodetectors is greatly superior to ZnO or doped ZnO thin film photodetectors, but it still cannot compare to conventional top‐down fabricated GaN‐based photodetectors due to a very slow photoresponse time.…”

Section: Photodetection Properties Of Doped Zno 1d‐nssmentioning

confidence: 99%

Doped ZnO 1D Nanostructures: Synthesis, Properties, and Photodetector Application

Hsu

Chang

2014

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In the past decades, the doping of ZnO one-dimensional nanostructures has attracted a great deal of attention due to the variety of possible morphologies, large surface-to-volume ratios, simple and low cost processing, and excellent physical properties for fabricating high-performance electronic, magnetic, and optoelectronic devices. This article mainly concentrates on recent advances regarding the doping of ZnO one-dimensional nanostructures, including a brief overview of the vapor phase transport method and hydrothermal method, as well as the fabrication process for photodetectors. The dopant elements include B, Al, Ga, In, N, P, As, Sb, Ag, Cu, Ti, Na, K, Li, La, C, F, Cl, H, Mg, Mn, S, and Sn. The various dopants which act as acceptors or donors to realize either p-type or n-type are discussed. Doping to alter optical properties is also considered. Lastly, the perspectives and future research outlook of doped ZnO nanostructures are summarized.

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Section: Photodetection Properties Of Doped Zno 1d‐nssmentioning

confidence: 99%

Doped ZnO 1D Nanostructures: Synthesis, Properties, and Photodetector Application

Hsu

Chang

2014

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“…Such observation also indicates that In is incorporated into NRs. 50 Fig . 22a shows the transient response of the fabricated photosensor.…”

Section: Performance Of Uv Photosensors With Al- Ga- and In-doped Zmentioning

confidence: 99%

Review—Growth of Al-, Ga-, and In-Doped ZnO Nanostructures via a Low-Temperature Process and Their Application to Field Emission Devices and Ultraviolet Photosensors

Young¹,

Yang²,

Lai³

2016

J. Electrochem. Soc.

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In recent decades, ZnO-based nanostructures have attracted considerable attention because of their various possible morphologies, large surface-to-volume ratios, non-toxicity, easy synthesis, low cost, and excellent physical properties for fabricating highperformance electronic, magnetic, and optoelectronic devices. This review article focuses on recent advances in Al-, Ga-, and In-doped ZnO nanostructures, including a brief overview of the hydrothermal method and aqueous solution methods. Among these strategies, ZnO nanostructures synthesized via the hydrothermal method exhibits distinct advantages, such as low growth temperature, low cost, and large resultant surface area, as well as applicability in fabricating field emission (FE) devices and photosensors. FE devices have gained widespread attention for their applications in flat-panel displays and other electronic devices, such as microwave amplifiers, X-ray tubes, cathode-ray tube monitors, and electron microscopes. FE devices are influenced by interrelated factors, including emitter geometry, crystal structure, conductivity, work function, spatial distribution of emitting centers, and nanostructure density of nanorods. An applied electric field bends the surface barrier to form a triangular barrier, and the excited electrons tunnel easily to generate the emission current. A large number of excited electrons are stored at the tips of nanowires, thereby causing subsequent point discharge that reduces the electric field. ZnO-based ultraviolet (UV) photosensors are frequently used in environmental monitoring, securing space-to-space communication, flame sensing, and chemical biological analysis. ZnO UV photosensors are used to manufacture various structures, such as p-n heterojunction photodiodes, metal-semiconductor-metal photosensors, and Schottky photodiodes. The resistance of pure n-type ZnO nanostructure is high. ZnO nanostructures are commonly doped with other elements. To improve the electrical properties of ZnO nanostructures, donor dopants for ZnO, such as group III elements (Al, Ga, and In), can be used. The optical and electrical properties of fabricated ZnO optoelectronic devices can also be improved by doping with group III elements. Furthermore, as a material with a direct bandgap (3.37 eV), ZnO can easily absorb wavelengths in the UV range. Thus, illumination under UV can enhance the FE capacity of ZnO nanowires. Methods that enhance the performance of field emitters and photosensors are introduced in this review paper. We hope that this review paper can provide a useful reference to those who are interested in ZnO-based field emission devices and photosensors. ZnO-based nanostructures comprise a highly promising key group of II-VI semiconductor materials. ZnO-based nanostructures have numerous advantages, including a wide bandgap of 3.37 eV, a direct bandgap structure at room temperature, a large exciton binding energy of approximately 60 meV, thermal stability at room temperature (significantly higher than that of GaN), non-toxicity, manufactu...

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“…Figure S4 in the Supporting Information, shows the noise power spectrum of the device. It is seen that low‐frequency noise (1/ f ), mainly originated from the mobility fluctuation caused by scattering of acoustic phonons and ionized impurities, dominates the device total noise. NEP is thus determined to be 3.7 × 10 −11 W by integrating the noise power density spectrum, giving rise to a D * of ≈5.25 × 10 12 Jones.…”

mentioning

confidence: 99%

“…The difference between our result and the maximum value comes from the device structures. It is known that NEP value is largely determined by the dark current, and photodiode‐type devices produce much lower dark current than photoconductor‐type devices, thus resulting in a smaller NEP and a higher D * . We expect that the D * of the CH 3 NH 3 PbI 3 MW array‐based photodetectors may be readily improved by further optimizing the device structure, such as introducing an asymmetrical electrodes to form a Schottky‐contact photodetector …”

mentioning

confidence: 99%

Aligned Single‐Crystalline Perovskite Microwire Arrays for High‐Performance Flexible Image Sensors with Long‐Term Stability

et al. 2016

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A simple, low-cost blade-coating method is developed for the large-area fabrication of single-crystalline aligned CH3NH3PbI3 microwire (MW) arrays. The solution-coating method is applicable to flexible substrates, enabling the fabrication of MW-array-based photodetectors with excellent long-term stability, flexibility, and bending durability. Integrated devices from such photodetectors demonstrate high performance for high-resolution, flexible image sensors.

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Low-Frequency Noise Characteristics of In-Doped ZnO Ultraviolet Photodetectors

Cited by 31 publications

References 17 publications

Doped ZnO 1D Nanostructures: Synthesis, Properties, and Photodetector Application

Doped ZnO 1D Nanostructures: Synthesis, Properties, and Photodetector Application

Review—Growth of Al-, Ga-, and In-Doped ZnO Nanostructures via a Low-Temperature Process and Their Application to Field Emission Devices and Ultraviolet Photosensors

Aligned Single‐Crystalline Perovskite Microwire Arrays for High‐Performance Flexible Image Sensors with Long‐Term Stability

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