Low-Frequency Noise in Gallium Nitride Thin Films Deposited by Rf-Plasma Assisted Mbe on Intermediate-Temperature Buffer Layers

Leung, B.H.; Fong, W.K.; Zhu, Chunhua; Surya, C.

doi:10.1142/9789812811165_0014

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“…For example, the value of α H for p -GaN resistor reported in ref ranged from 1 to 150. It was found to be between ∼0.04 and 0.3 for GaN films with different thickness . The improvements in the GaN film quality ( e.g.…”

Section: Low-frequency Noise Data and Discussionmentioning

confidence: 96%

“…It was found to be between ∼0.04 and 0.3 for GaN films with different thickness. 32 The improvements in the GaN film quality (e.g., substantially smaller defect concentration) and increased electron carrier density in 2D channels resulted in much smaller R H values of 10 À3 À10 À4 in GaN heterostructure field-effect transistors. 33 The Hooge parameter ∼10 À3 was reported for the long metal resistors or pÀn junctions, ∼10 À5 for Si complementary metal-oxide-semiconductor devices and ∼10 À8 for the short-channel GaAs field-effect transistors and bipolar junction transistors depending on the quality of the materials and devices.…”

Section: Low-frequency Noise Data and Discussionmentioning

confidence: 99%

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Low-Frequency Current Fluctuations in “Graphene-like” Exfoliated Thin-Films of Bismuth Selenide Topological Insulators

et al. 2011

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We report on the low-frequency current fluctuations and electronic noise in thin-films made of Bi(2)Se(3) topological insulators. The films were prepared via the "graphene-like" mechanical exfoliation and used as the current conducting channels in the four- and two-contact devices. The thickness of the films ranged from ∼50 to 170 nm to avoid hybridization of the top and bottom electron surface states. Analysis of the resistance dependence on the film thickness indicates that the surface contribution to conductance is dominant in our samples. It was established that the current fluctuations have the noise spectrum close to the pure 1/f in the frequency range from 1 Hz to 10 kHz (f is the frequency). The relative noise amplitude S(I)/I(2) for the examined Bi(2)Se(3) films was increasing from ∼5 × 10(-8) to 5 × 10(-6) (1/Hz) as the resistance of the channels varied from ∼10(3) to 10(5) Ω. The obtained noise data is important for understanding electron transport through the surface and volume of topological insulators, and proposed applications of this class of materials. The results may help to develop a new method of noise reduction in electronic devices via the "scattering immune" transport through the surface states.

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Section: Low-frequency Noise Data and Discussionmentioning

confidence: 96%

Section: Low-frequency Noise Data and Discussionmentioning

confidence: 99%