Low-frequency noise in high performance and stability of Li-doped ZnO thin-film transistors

Abliz, Ablat; Wan, Da; Duan, Haiming; Yang, Linyu; Mamat, Mamatrishat; Chen, Henglei; Xu, Lei

doi:10.1088/1361-6463/ab9ce3

Cited by 13 publications

(9 citation statements)

References 42 publications

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“…According to the equation, N e increases with the negative shift of V th after increasing the Ar gas flow rate. Furthermore, this result also demonstrated that the mobility of our oxide semiconductor devices is strongly dependent on the carrier concentration on the channel layer . Carrier transport is regulated by percolation conduction through the trap states, and filling the trap states increases the carrier movement at high concentrations .…”

Section: Results and Discussionsupporting

confidence: 53%

“…From the table, the SS average values of Ar 50, 75, and 100 samples are 0.24 ± 0.03, 0.23 ± 0.07, and 0.39 ± 0.26 V/dec, respectively. SS is correlated with the D it of the oxide TFTs and was estimated from this equation: , D it = C ox q SS log ( e ) k normalB T q − 1 where k B is Boltzmann’s constant, T is the absolute temperature, and q is charge of an electron. Based on the above equation, the D it values of the Ar 50 sample and the Ar 75 sample were found to be 1.44 × 10 13 and 1.38 × 10 13 cm –2 eV –1 , demonstrating that the D it of the a-IZO TFTs is reduced by increasing the Ar flow rate.…”

Section: Results and Discussionmentioning

confidence: 99%

“…This result can be seen in Figure , which shows a change from 0.0 to −1.5 V as the Ar gas flow rate was increased from 50 to 100 sccm. The shift in V th to negative indicates an increase in the electron concentration ( N e ) which is calculated by this equation: , N e = C ox ( V gs − V th ) q where C ox is the capacitance per unit area of the gate insulator material, which in our case is F-PSQ, and q is the electron charge. According to the equation, N e increases with the negative shift of V th after increasing the Ar gas flow rate.…”

Section: Results and Discussionmentioning

confidence: 99%

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Performance and Stability Enhancement of Fully Solution-Processed a-InZnO Thin-Film Transistors via Argon Plasma Treatment

Hanifah,

Bermundo,

Kawanishi

et al. 2023

ACS Appl. Electron. Mater.

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The market is now moving to next-generation flexible electronics which requires the integration of functional solution-processed materials using simple and low-temperature fabrication techniques that are compatible with heat-sensitive substrates. Although several studies have reported on the high-performance solution-processed layer in oxide thin-film transistors (TFTs), achieving high mobility while maintaining good stability under the bias stress test remains a challenge. In this report, we show that argon (Ar) plasma treatment is an effective method for achieving fully solution-processed amorphous indium zinc oxide (a-IZO) TFTs with high stability and performance. Particularly, Ar plasma treatment can activate the electrode and induce TFT switching. The electrical performance of the a-IZO TFT was also enhanced by the Ar plasma treatment. From the experimental results, fully solution-processed a-IZO TFTs with high mobility up to 31.12 cm2/(V s) was achieved by Ar plasma treatment for 5 s at an Ar flow rate of 75 sccm. The stability behavior of the self-aligned top gate top contact a-IZO TFT treated with argon plasma was investigated under positive bias stress (PBS) and negative bias stress (NBS) with a smallest threshold voltage shift (ΔV th) of −0.3 and 0.7 V for PBS and NBS, respectively. ΔV th is improved due to the higher film densification which confirms better film quality. Higher mobile carrier with lower interface trap density and film densification are the main reasons behind the performance and stability improvement of these TFTs. These results show that the performance and stability enhancement of the fully solution-processed a-IZO TFT by plasma treatment has a large potential for future low-temperature flexible device applications.

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Section: Results and Discussionsupporting

confidence: 53%

Section: Results and Discussionmentioning

confidence: 99%

Section: Results and Discussionmentioning

confidence: 99%

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Performance and Stability Enhancement of Fully Solution-Processed a-InZnO Thin-Film Transistors via Argon Plasma Treatment

Hanifah,

Bermundo,

Kawanishi

et al. 2023

ACS Appl. Electron. Mater.

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show abstract

“…Also from Figure a, it can be noted that the normalized drain current noise power spectral density tends to decrease as the oxygen pressure increases. This predicts a decrease in the average defect trap state density in the bulk and surface of α-IGZO film. , This also indirectly proves that UV-ORTA treatment is effective in reducing α-IGZO film defects.…”

Section: Resultsmentioning

confidence: 59%

“…This predicts a decrease in the average defect trap state density in the bulk and surface of α-IGZO film. 54,55 This also indirectly proves that UV-ORTA treatment is effective in reducing α-IGZO film defects.…”

Section: Resultsmentioning

confidence: 99%

Ultraviolet-Assisted Low-Thermal-Budget-Driven α-InGaZnO Thin Films for High-Performance Transistors and Logic Circuits

Zhang

Wang

et al. 2022

ACS Nano

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Developing a low-temperature fabrication strategy of an amorphous InGaZnO (α-IGZO) channel layer is a prerequisite for high-performance oxide-based thin film transistor (TFT) flexible device applications. Herein, an ultraviolet-assisted oxygen ambient rapid thermal annealing method (UV-ORTA), which combines ultraviolet irradiation with rapid annealing treatment in an oxygen atmosphere, was proposed to realize the achievement of high-performance α-IGZO TFTs at low temperature. Experimental results have confirmed that UV-ORTA treatment has the ability to suppress defects and obtain high-quality films similar to high-temperature-annealing-treated samples. α-IGZO/HfAlO TFTs with high-performance and low-voltage operating have been achieved at a low temperature of 180 °C for 200 s, including a high μsat of 23.12 cm2 V–1 S–1, large I on/off of 1.1 × 108, small subthreshold swing of 0.08 V/decade, and reliable stability under bias stress, respectively. As a demonstration of complex logic applications, a low-voltage resistor-loaded unipolar inverter based on an α-IGZO/HfAlO TFT has been built, demonstrating full swing characteristics and a high gain of 13.8. Low-frequency noise (LFN) characteristics of α-IGZO/HfAlO TFTs have been presented and concluded that the noise source tended to a carrier number fluctuation (ΔN) model from a carrier number and correlated mobility fluctuation (ΔN–Δμ) model. As a result, it can be inferred that the low-temperature UV-ORTA technique to improve α-IGZO thin film quality provides a facile and designable process for the integration of α-IGZO TFTs into a flexible electronic system.

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Enhanced Hall Mobility and d0 Ferromagnetism in Li-Doped ZnO Thin Films Prepared by Aerosol-Assisted CVD

Mustajab

Arifin

Suprijadi

et al. 2023

Electron. Mater. Lett.

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Low-frequency noise in high performance and stability of Li-doped ZnO thin-film transistors

Cited by 13 publications

References 42 publications

Performance and Stability Enhancement of Fully Solution-Processed a-InZnO Thin-Film Transistors via Argon Plasma Treatment

Performance and Stability Enhancement of Fully Solution-Processed a-InZnO Thin-Film Transistors via Argon Plasma Treatment

Ultraviolet-Assisted Low-Thermal-Budget-Driven α-InGaZnO Thin Films for High-Performance Transistors and Logic Circuits

Enhanced Hall Mobility and d0 Ferromagnetism in Li-Doped ZnO Thin Films Prepared by Aerosol-Assisted CVD

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