Low gallium‐content, dysprosium III‐doped, Ge–As–Ga–Se chalcogenide glasses for active mid‐infrared fiber optics

Abstract

A systematic investigation is presented, for the first time, of a 1000 ppmw (parts per million, by weight) Dy 3+ -doped Ge-As-Ga-Se chalcogenide glass series, with a fixed low Ga content of 1 atomic% (at. %), suitable for active mid-infrared fiber optics. Seven glasses constitute the series, which have increasing average coordination number from 2.49 to 2.61, in steps of 0.02, with the GeSe 2 , As 2 Se 3 , and Ga 2 Se 3 stoichiometries kept. Glass formation is confirmed using X-ray diffraction and differential scanning calorimetry. Fourier transform infrared spectroscopy is reported for the series. Parallel plate viscometry enables prediction of fiber-drawing temperatures and, with differential thermal analysis, determines the potential for fiber fabrication. X-ray diffraction of samples after parallel-plate viscometry shows that Ge 25 As 9 Ga 1 Se 65 (at. %) alone, in the glass-series, devitrifies to form the single-crystalline phase: monoclinic-GeSe 2 ; scanning electron microscope imaging suggests that this phase is both surface and bulk grown. Overall, the recommended host glass at. % compositions for doping with rare-earth ions and drawing to active mid-infrared fiber are

Ultra-broadband mid-infrared emission from a Pr3+/Dy3+ co-doped selenide-chalcogenide glass fiber spectrally shaped by varying the pumping arrangement [Invited]

“…500 ppmw Pr 3+ and 500 ppmw Dy 3+ co-doped Ge-As-Ga-Se glass rods were prepared using the conventional melt-quenching method, more details of which can be found in [20,21]. The glass composition was Ge14.9As20.9Se62.7Ga1.5 and more information about the glass composition development can be found in [24]. The preform was fiber-drawn into 320 µm diameter unstructured fiber and was not polymer-coated.…”

Effect of glass composition on the physical properties and luminescence of Pr3+ ion‐doped chalcogenide glasses

“…Figure 4C displays that the In-containing glass has a stronger luminescence intensity than the Ga-containing glass if other components are the same. [36][37][38] Given that In is in the same column as the Ga periodic table, it has the same external electronic structure as Ga. The luminescence intensity visibly increases when In atoms are replaced by Sb atoms.…”

“…First, Ga atoms can increase the RE solubility by a local [Ga-(S/Se)-RE] chemical complexation. [36][37][38] Given that In is in the same column as the Ga periodic table, it has the same external electronic structure as Ga. In can also be chemically complexed with RE ions to form [In-(S/Se)-RE].…”