“…A lot of effort have gone in hysteresis loss reduction through doping of Fe, Cu, Co, Ga, Mn, Ni, Nb or Al for Si/Ge in Gd 5 (Si x Ge 1-x ) 4 compound between 270 K and 300 K as can be seen in Table 3. Two side effects have been observed: (1) Broadening of MCE peak on account of suppression of the reversible field-induced first-order monoclinic-to-orthorhombic phase transition, and (2) Shifting of MCE peak position between 270 K and 300 K temperature range [15,19,[25][26][27].…”