Low leakage current in metal-insulator-metal capacitors of structural Al2O3/TiO2/Al2O3 dielectrics

Woo, Jong‐Chang; Chun, Yeoun Sook; Joo, Young-Hee; Kim, Chang-Il

doi:10.1063/1.3687702

Cited by 42 publications

(13 citation statements)

References 12 publications

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“…The highest capacitance density has a typical value ∼20.8 fF/μm 2 at 100 Hz, 3.5 V. The frequency dispersion effect on capacitance density of MIM capacitors is very small. The observed C-V characteristics are similar to that observed by other researchers [5]- [7], [17] for different high-κ oxide based MIM capacitors. The performance of a MIM capacitor depends upon the material properties of the deposited dielectric along with top and bottom electrodes.…”

Section: Resultssupporting

confidence: 89%

Study of La-Incorporated HfO₂ MIM Structure Fabricated Using PLD System for Analog/Mixed Signal Applications

Srivastava

Mangla

Gupta

2015

IEEE Trans. Nanotechnology

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Metal-insulator-metal (MIM) capacitors withAl/HfO 2 /La 2 O 3 /Al structure were fabricated using pulse laser deposition for the first time and were further investigated for their electrical and morphological properties. The MIM capacitors for future applications in analog/mixed signal circuits need further improvement in their electrical characteristics. We have fabricated MIM capacitors having low leakage current density of ∼ 9.6 × 10 −9 A/cm 2 at −1 V and high-capacitance density ∼20.8 fF/μm 2 at 3.5 V for 100-Hz frequency. The frequency dispersion effect of these MIM capacitors is observed to be quite small. We have also obtained an improved voltage coefficient of capacitance of ∼101 ppm/V 2 at 1 MHz along with improved dielectric constant which is one of the most important parameters for next generation MIM capacitors. The physical thickness of HfO 2 /La 2 O 3 dielectric film stack is found to be 13 nm in cross-section TEM. This value of physical thickness is consistent with the low EOT ∼1.66-nm estimated using C-V curve. Morphological studies of having nanostructured film morphology with low roughness are consistent with the electrical characteristics of MIM capacitors. Further improvement in electrical properties like lower leakage current density, etc., has been obtained in post metallic annealed MIM capacitors. We have observed Schottky emission as the dominant current conduction mechanism for these MIM capacitors. Index Terms-Dielectric constant, HfO 2 , high-κ dielectric, La 2 O 3 , MIM capacitor, voltage coefficient of capacitance.1536-125X India. His current research interests include fabrication of nanomaterials using plasma methods and their characterization for optical and electrical applications. He is also working on the fabrication of high-k dielectrics using plasma methods and study their various properties for possible use in next generation metal-oxide-semiconductor and metal-insulator-metal capacitors.V. Gupta (SM'01) received the B.Sc., M.Sc., and Ph.D. degrees in physics in 1987, 1989, and 1995, from the University of Delhi, Delhi, India.In 1995, he was a Reader in Physics at Deendayal Upadhyaya College, University of Delhi. He is currently a Professor in the Department of Physics and Astrophysics, University of Delhi. He received BOYSCAST fellow and MRSI medal. His current research interests include piezoelectric, ferroelectric, multiferroics and semiconducting thin films, gas/ bio sensors, UV photon detector, electro-optic applications, surface plasmon resonance, oxide nanostructures for multifunctional applications, etc. He is also working on the fabrication of MEMs-based microheaters, microwave resonators, surface acoustic wave devices, etc., and their respective applications.

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Section: Resultssupporting

confidence: 89%

Study of La-Incorporated HfO₂ MIM Structure Fabricated Using PLD System for Analog/Mixed Signal Applications

Srivastava

Mangla

Gupta

2015

IEEE Trans. Nanotechnology

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“…The observed C-V characteristics are comparable to the results of other researchers [20][21][22]24 for different high-j oxide MIM capacitors. In particular, the capacitance densities obtained in the present experiment for the one-shot case is larger compared to the 10-nm La 2 O 3 MIM structure grown by e-beam evaporation.…”

Section: Resultssupporting

confidence: 89%

Metal-insulator-metal capacitors based on lanthanum oxide high-κ dielectric nanolayers fabricated using dense plasma focus device

Mangla

Srivastava

Malhotra

et al. 2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Articles you may be interested inHigh aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition The role of carbon contamination in voltage linearity and leakage current in high-k metal-insulator-metal capacitors J. Appl. Phys. 104, 054510 (2008); 10.1063/1.2973687 High capacitance density metal-insulator-metal structure based on Al 2 O 3 -Hf Ti O nanolaminate stacks Appl. Phys. Lett. 90, 013506 (2007); 10.1063/1.2425030 Physical and electrical characterization of HfO 2 metal-insulator-metal capacitors for Si analog circuit applicationsMetal-insulator-metal (MIM) capacitors with lanthanum oxide (La 2 O 3 ) high-j dielectric, for potential applications in mixed-signal integrated circuit (IC), have been fabricated using a dense plasma focus device. The electrical characteristics and morphological properties of the fabricated nanodevices are studied. The MIM capacitors were further annealed to enhance the electrical properties in terms of the low leakage current density, the high capacitance density, and the improved capacitance voltage linearity. The minimum leakage current densities of $1.6 Â 10 À9 A/cm 2 and $2.0 Â 10 À10 A/cm 2 at À1 V are obtained along with the maximum capacitance densities of $17.96 fF/lm 2 at 100 kHz and $19.10 fF/lm 2 at 1 MHz, 0 V for as-fabricated and annealed MIM capacitors having 15 nm thick dielectric layers as measured using ellipsometry. The nanofilms with the minimum root mean square roughness of $10 nm are examined using atomic force microscopy. The results are superior compared to some other MIM capacitors and can be optimized to achieve the best electrical parameters for potential applications in radio frequency (RF)/mixed signal ICs. The high frequency C-V measurements indicate an increase in the capacitance density upon increasing the frequency which supports the possibility of potential high-frequency/RF applications of the MIM capacitors.

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“…Many approaches have been made to reduce the leakage current. Among them, the sandwich structure of nanolaminate Al 2 O 3 /TiO 2 /Al 2 O 3 (ATA) [ 14 ] has been commonly used because Al 2 O 3 has a large bandgap of about 8.9 eV, and its excellent passivation properties usually lead to high-quality interfaces. In our previous work, we demonstrated a kind of transparent capacitor with nanolaminate ATA as dielectrics and Al-doped ZnO (AZO) as electrodes on quartz glass [ 15 ].…”

Section: Introductionmentioning

confidence: 99%

Transparent and flexible capacitors based on nanolaminate Al2O3/TiO2/Al2O3

Zhang

Chen

et al. 2015

Nanoscale Res Lett

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Transparent and flexible capacitors based on nanolaminate Al2O3/TiO2/Al2O3 dielectrics have been fabricated on indium tin oxide-coated polyethylene naphthalate substrates by atomic layer deposition. A capacitance density of 7.8 fF/μm2 at 10 KHz was obtained, corresponding to a dielectric constant of 26.3. Moreover, a low leakage current density of 3.9 × 10−8 A/cm2 at 1 V has been realized. Bending test shows that the capacitors have better performances in concave conditions than in convex conditions. The capacitors exhibit an average optical transmittance of about 70% in visible range and thus open the door for applications in transparent and flexible integrated circuits.

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Low leakage current in metal-insulator-metal capacitors of structural Al2O3/TiO2/Al2O3 dielectrics

Cited by 42 publications

References 12 publications

Study of La-Incorporated HfO₂ MIM Structure Fabricated Using PLD System for Analog/Mixed Signal Applications

Study of La-Incorporated HfO₂ MIM Structure Fabricated Using PLD System for Analog/Mixed Signal Applications

Metal-insulator-metal capacitors based on lanthanum oxide high-κ dielectric nanolayers fabricated using dense plasma focus device

Transparent and flexible capacitors based on nanolaminate Al2O3/TiO2/Al2O3

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Low leakage current in metal-insulator-metal capacitors of structural Al2O3/TiO2/Al2O3 dielectrics

Cited by 42 publications

References 12 publications

Study of La-Incorporated HfO2 MIM Structure Fabricated Using PLD System for Analog/Mixed Signal Applications

Study of La-Incorporated HfO2 MIM Structure Fabricated Using PLD System for Analog/Mixed Signal Applications

Metal-insulator-metal capacitors based on lanthanum oxide high-κ dielectric nanolayers fabricated using dense plasma focus device

Transparent and flexible capacitors based on nanolaminate Al2O3/TiO2/Al2O3

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Study of La-Incorporated HfO₂ MIM Structure Fabricated Using PLD System for Analog/Mixed Signal Applications

Study of La-Incorporated HfO₂ MIM Structure Fabricated Using PLD System for Analog/Mixed Signal Applications