Low-level copper concentration measurements in silicon wafers using trace-element accelerator mass spectrometry

McDaniel, F. D.; Datar, S. A.; Guo, B. N.; Renfrow, S. N.; Zhao, Zhiying; Anthony, J.

doi:10.1063/1.121523

Cited by 12 publications

(4 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Depth profiling of the material concentration in samples is commonly performed with secondary ion mass spectrometry (SIMS). Recently, it has also been performed with accelerator mass spectrometry (AMS) [1][2][3][4][5]. Independently of the employed method, the depth resolution depends on flat bottom craters produced by the sputter ion beam.…”

Section: Introductionmentioning

confidence: 99%

Unfolding procedure for AMS depth profiling

Enăchescu

Lazarev

Stan-Sion

2006

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Accelerator mass spectrometry measures the depth profiles of material concentration in solid samples. Crater edge effects affect the experimental data when the secondary ions are sputtered from the sidewalls of the produced crater. We present a simple mathematical unfolding procedure that removes the perturbing contribution from the measured depth profile data. Application of this procedure to experimental data is also presented.

show abstract

Section: Introductionmentioning

confidence: 99%

Unfolding procedure for AMS depth profiling

Enăchescu

Lazarev

Stan-Sion

2006

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…The emerging positive ions with MeV energies are measured in a Faraday cup or in a detector. The TEAMS technique is proven to be more sensitive than SIMS for many elements [11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Depth Profiles of Mg, Si, and Zn Implants in GaN by Trace Element Accelerator Mass Spectrometry

Prasad¹,

Pelicon²,

Mitchell³

et al. 2003

AIP Conference Proceedings

View full text Add to dashboard Cite

GaN is one of the most promising electronic materials for applications requiring high-power, high frequencies, or high-temperatures as well as opto-electronics in the blue to ultraviolet spectral region. We have recently measured depth profiles of Mg, Si, and Zn implants in GaN substrates by the TEAMS particle counting method for both matrix and trace elements, using a gas ionization chamber. Trace Element Accelerator Mass Spectrometry (TEAMS) is a combination of Secondary Ion Mass Spectrometry (SIMS) and Accelerator Mass Spectrometry (AMS) to measure trace elements at ppb levels. Negative ions from a SIMS like source are injected into a tandem accelerator. Molecular interferences inherent with the SIMS method are eliminated in the TEAMS method. Negative ion currents are extremely low with GaN as neither gallium nor nitrogen readily forms negative ions making the depth profile measurements more difficult. The energies of the measured ions are in the range of 4-8 MeV. A careful selection of mass/charge ratios of the detected ions combined with energy-loss behavior of the ions in the ionization chamber eliminated molecular interferences.

show abstract

“…5 The trace element accelerator mass spectrometry ͑TEAMS͒ facility in the Ion Beam Modification and Analysis Laboratory at the University of North Texas is a combination of both SIMS and AMS and may be used to measure trace amounts of stable isotopes. 6 TEAMS can detect very low levels of impurities whose presence, even in trace amounts ͑parts per billion͒, affects device performance. 7 It is difficult to quantify 75 As in a GeSi semiconductor alloy using SIMS because of molecular interferences ͑e.g., 74 GeH and 29 Si 30 Si 16 O) which have the same nominal mass as As.…”

mentioning

confidence: 99%

High sensitivity measurement of implanted As in the presence of Ge in GexSi1−x/Si layered alloys using trace element accelerator mass spectrometry

Datar

Guo

et al. 2000

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

Various devices can be realized on strained GeSi/Si substrates by doping the substrate with different impurities such as As. As is an n-type dopant in both Ge and Si. As cross contamination can also arise during germanium preamorphization implantation due to inadequate mass resolution in the implanter. Thus, it is important to be able to accurately measure low-level As concentrations in the presence of Ge. Secondary ion mass spectrometry (SIMS) is the standard technique for these types of measurements but is constrained by mass interferences from molecular ions (74GeH, 29Si30Si16O). The trace element accelerator mass accelerator technique allows the breakup of interfering molecules. As is measured in a GeSi matrix with sensitivity significantly better than SIMS.

show abstract

Low-level copper concentration measurements in silicon wafers using trace-element accelerator mass spectrometry

Cited by 12 publications

References 12 publications

Unfolding procedure for AMS depth profiling

Unfolding procedure for AMS depth profiling

Depth Profiles of Mg, Si, and Zn Implants in GaN by Trace Element Accelerator Mass Spectrometry

High sensitivity measurement of implanted As in the presence of Ge in GexSi1−x/Si layered alloys using trace element accelerator mass spectrometry

Contact Info

Product

Resources

About