Low-loss buried AlGaAs/AlOx waveguides using a quasi-planar process

Calvez, S.; Calmon, Pierre-François; Arnoult, Alexandre; Gauthier-Lafaye, Olivier; Fontaine, C.; Almuneau, Guilhem

doi:10.1364/oe.25.019275

Cited by 3 publications

(2 citation statements)

References 22 publications

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“…Technologies currently under development allow for the oxidation of areas inside laser structures during their processing. It is therefore possible to oxidize selectively buried layers of AlGaAs [28,29,38]. The process starts with the etching of micron holes in the epitaxial structure above the oxidized layer, by the use of standard lithography techniques.…”

Section: Analyzed Structurementioning

confidence: 99%

Impact of an Antiresonant Oxide Island on the Lasing of Lateral Modes in VCSELs

2020

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Use of antiresonant structures is a proven, efficient method of improving lateral mode selectivity in VCSELs. In this paper, we analyze the impact of a low-refractive antiresonant oxide island buried in a top VCSEL mirror on the lasing conditions of lateral modes of different orders. By performing comprehensive thermal, electrical, and optical numerical analysis of the VCSEL device, we show the impact of the size and location of the oxide island on the current-crowding effect and compute threshold currents for various lateral modes. If the island is placed close to the cavity, the threshold shows strong oscillations, which for moderate island distances can be tuned to increase the side mode discrimination. We are therefore able to pinpoint the most important factors influencing mode discrimination and to identify oxide island parameters capable of providing single-lateral-mode emission.

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Section: Analyzed Structurementioning

confidence: 99%

Impact of an Antiresonant Oxide Island on the Lasing of Lateral Modes in VCSELs

2020

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“…The wet oxidation of aluminum-containing III-V semiconductors is a process where water vapor induces a compositionally-selective transformation of high-refractive-index (n Al-III-V~2 .9) high-Al-content semiconductor alloys into low-refractive-index (n AlOx~1 .6) insulating aluminum oxides [1]. This change in material properties is typically used to define the electrical injection path and the optical field distribution in a variety of devices [2] including Vertical-Cavity Surface-Emitting Lasers (VCSELs) [3] [4], optical waveguide devices [5] [6] [7] [8] [9], transistors [10] and transistor lasers [11]. In the former two cases, the device internal and external (fiber-coupling) efficiencies critically depend on the size and shape of the oxide aperture i.e.…”

Section: Introductionmentioning

confidence: 99%

Modelling anisotropic lateral oxidation from circular mesas

Calvez¹,

Lafleur²,

Arnoult³

et al. 2018

Opt. Mater. Express

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In this paper, an iterative method to model the anisotropic lateral oxidation of circular structures is proposed and validated by confrontation to experimental data. The described model enables the efficient calculation of the temporal bi-dimensional evolution of the oxidation front shape, starting from a circular mesa, and progressing inward as a result of an anisotropic process combining an isotropic diffusion with an anisotropic reaction. The result of the developed model shows that the oxide aperture smoothly deforms from a circle to become more diamond-like, mimicking the experimental situation encountered when fabricating Vertical-Cavity Surface-Emitting Lasers (VCSELs) on (100) wafers or, more generally, when oxidizing circular mesas of aluminum-containing III-V semiconductor on similarly oriented substrates.

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Spectrally-shaped illumination for improved optical inspection of lateral III-V-semiconductor oxidation

Monvoisin¹,

Hemsley²,

Laplanche³

et al. 2023

Opt. Express

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We report an hyperspectral imaging microscopy system based on a spectrally-shaped illumination and its use to offer an enhanced in-situ inspection of a technological process that is critical in Vertical-Cavity Surface-Emitting Laser (VCSEL) manufacturing, the lateral III-V-semiconductor oxidation (AlOx). The implemented illumination source exploits a digital micromirror device (DMD) to arbitrarily tailor its emission spectrum. When combined to an imager, this source is shown to provide an additional ability to detect minute surface reflectance contrasts on any VCSEL or AlOx-based photonic structure and, in turn, to offer improved in-situ inspection of the oxide aperture shapes and dimensions down to the best-achievable optical resolution. The demonstrated technique is very versatile and could be readily extended to the real-time monitoring of oxidation or other semiconductor technological processes as soon as they rely on a real-time yet accurate measurement of spatio-spectral (reflectance) maps.

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Low-loss buried AlGaAs/AlOx waveguides using a quasi-planar process

Cited by 3 publications

References 22 publications

Impact of an Antiresonant Oxide Island on the Lasing of Lateral Modes in VCSELs

Impact of an Antiresonant Oxide Island on the Lasing of Lateral Modes in VCSELs

Modelling anisotropic lateral oxidation from circular mesas

Spectrally-shaped illumination for improved optical inspection of lateral III-V-semiconductor oxidation

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