Low-noise and small-area integrated amplifier circuit for mems-based implantable hearing aid applications

Zargarpour, Nazli; Asayesh, Hamid; Bahador, Hamid

doi:10.1007/s00542-016-3166-y

Cited by 5 publications

(1 citation statement)

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“…This microphone has a frequency range between 20 Hz and 20 kHz and a first resonant frequency of 332.87 kHz. Next, Zargarpour, Abdi and Bahador [ 13 ] designed the voltage amplifier circuit of the piezoelectric MEMS microphone using the 180 nm standard CMOS technology. With this circuit were achieved an amplification gain of 84.78 dB, an average power consumption of 0.216 mW and a noise level of 4.192 µVrms.…”

Section: Introductionmentioning

confidence: 99%

Design and Modeling of a MEMS Dual-Backplate Capacitive Microphone with Spring-Supported Diaphragm for Mobile Device Applications

Peña-García

Aguilera-Cortés

González-Palacios

et al. 2018

Sensors

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New mobile devices need microphones with a small size, low noise level, reduced cost and high stability respect to variations of temperature and humidity. These characteristics can be obtained using Microelectromechanical Systems (MEMS) microphones, which are substituting for conventional electret condenser microphones (ECM). We present the design and modeling of a capacitive dual-backplate MEMS microphone with a novel circular diaphragm (600 µm diameter and 2.25 µm thickness) supported by fifteen polysilicon springs (2.25 µm thickness). These springs increase the effective area (86.85% of the total area), the linearity and sensitivity of the diaphragm. This design is based on the SUMMiT V fabrication process from Sandia National Laboratories. A lumped element model is obtained to predict the electrical and mechanical behavior of the microphone as a function of the diaphragm dimensions. In addition, models of the finite element method (FEM) are implemented to estimate the resonance frequencies, deflections, and stresses of the diaphragm. The results of the analytical models agree well with those of the FEM models. Applying a bias voltage of 3 V, the designed microphone has a bandwidth from 31 Hz to 27 kHz with 3 dB sensitivity variation, a sensitivity of 34.4 mV/Pa, a pull-in voltage of 6.17 V and a signal to noise ratio of 62 dBA. The results of the proposed microphone performance are suitable for mobile device applications.

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Section: Introductionmentioning

confidence: 99%