Low-noise, high-detectivity, polarization-sensitive, room-temperature infrared photodetectors based on Ge quantum dot-decorated Si-on-insulator nanowire field-effect transistors

Abstract

A CMOS-compatible infrared (IR; 1200–1700 nm) detector based on Ge quantum dots (QDs) decorated on a single Si-nanowire channel on a silicon-on-insulator (SOI) platform with a superior detectivity at room temperature is presented. The spectral response of a single nanowire device measured in a back-gated field-effect transistor geometry displays a very high value of peak detectivity ∼9.33 × 1011 Jones at ∼1500 nm with a relatively low dark current (∼20 pA), which is attributed to the fully depleted Si nanowire channel on SOI substrates. The noise power spectrum of the devices exhibits a 1 / f γ , with the exponent, γ showing two different values of 0.9 and 1.8 owing to mobility fluctuations and generation-recombination of carriers, respectively. Ge QD-decorated nanowire devices exhibit a novel polarization anisotropy with a remarkably high photoconductive gain of ∼104. The superior performance of a Ge QDs/Si nanowire phototransistor in IR wavelengths is potentially attractive to integrate electro-optical devices into Si for on-chip optical communications.

Interlayer Transition Induced Infrared Response in ReS2/2D Perovskite van der Waals Heterostructure Photodetector

“…The NEP values under different power density at V ds = −3 V are evaluated (Figure S5b), and the corresponding D * values are summarized in Figure b (red line), which shows the maximum D * value of 1.2 × 10 12 Jones. This value is comparable to that of traditional silicon photodetector. , Additionally, the frequency photoresponse of the device is also evaluated. The cutoff frequency of 3 dB is located at 1.3 kHz (Figure c).…”

“…This value is comparable to that of traditional silicon photodetector. 30,31 Additionally, the frequency photoresponse of the device is also evaluated. The cutoff frequency of 3 dB is located at 1.3 kHz (Figure 3c).…”

Nanocrystallized Ge-Rich SiGe-HfO2 Highly Photosensitive in Short-Wave Infrared

“…Photoconductive properties can also be boosted, besides quantum confinement effect in Ge NCs/QDs, by exploiting the Ge related defects/traps, most of them being localized states from NC/oxide matrix interface, by trapping photogenerated holes on these defects/traps and thus increasing the lifetime of electrons [27][28][29]. Recently, a phototransistor with Ge QDs decorated on a single Si-nanowire channel integrated on an SOI platform was reported, its spectral response at room temperature ranging from 1200 to 1700 nm [30].…”

Anisotropic Low‐Dimensional Materials for Polarization‐Sensitive Photodetectors: From Materials to Devices

“…[177] By artificially designing the core-shell heterojunction, symmetry-reduction obviously caused the different charge density distribution to enhance the performance of polarization-sensitive photodetectors. Recently, John et al have designed a Ge quantum dots coated on single Si nanowire for polarization-sensitive photodetection in the infrared range, [204] which provides a new idea in 1D systems. In 2021, a polarized photodetector based on Ag@CH 3 NH 3 PbI 3 @ ITO core-shell nanowire has been proposed.…”