Low-Noise Microwave Performance of 30 nm GaInAs MOS-HEMTs: Comparison to Low-Noise HEMTs

Han, Daxin; Ruiz, Diego Calvo; Bonomo, Giorgio; Saranovac, Tamara; Ostinelli, O.; Bolognesi, C.R.

doi:10.1109/led.2020.3012017

Cited by 7 publications

(5 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…At higher V DS , impact ionization creates secondary electron-hole pairs near the drain end of the gate: whereas generated electrons flow out the drain contact with the initiating electrons, the resulting holes drift back toward the source region, where their positive space charge lowers the potential barrier at the source end of the channel, thus allowing more electrons to enter the channel through a bipolar transistorlike positive feedback mechanism on the drain current [33]. The gate oxide suppresses hole leakage through the gate with respect to the Schottky gate in an HEMT [35], enhancing the positive feedback on the drain current I D . For sufficiently high applied drain voltages, a steep-slope behavior develops in the I D -V G transistor characteristics, giving rise to a rapid current increase in drain current.…”

Section: A Gainas I-mos Steep-slope Switching Characteristicsmentioning

confidence: 99%

“…Indeed, much effort continues to be invested in mitigating impact ionization effects in high-indium content high electron mobility transistors (HEMTs) [31], [32], where the resulting parasitic bipolar effect due to generated holes [33] leads to an I D -V DS characteristics kink and negatively impacts the microwave minimum noise figure (NF MIN ) of HEMTs [34]. We recently demonstrated that the use of an Al 2 O 3 gate oxide greatly enhances impact ionization artifacts in GaInAs MOS-HEMTs in comparison to conventional Schottky gate HEMTs fabricated with a channel of the same thickness and composition by bolstering the lateral parasitic bipolar effect [35]. Such findings naturally lead one to consider whether high impact ionization materials such as GaInAs (or InAs) channels could profitably be exploited in the realization of I-MOS steep-slope transistors.…”

mentioning

confidence: 99%

See 1 more Smart Citation

High-Speed Steep-Slope GaInAs Impact Ionization MOSFETs (I-MOS) With SS = 1.25 mV/dec—Part I: Material and Device Characterization, DC Performance, and Simulation

Han¹,

Bonomo²,

Ruiz³

et al. 2022

IEEE Trans. Electron Devices

Self Cite

View full text Add to dashboard Cite

Digital electronics power consumption evolved into a major concern: at the current pace, generalpurpose computing energy consumption will exceed global energy production before 2045. The principal approach to curbing energy consumption in digital applications calls for "steep-slope" devices with an inverse subthreshold slope (SS) parameter well below the "ln(10)•kT /q" limit of conventional electronics ( 60mV/dec at 300 K). Impact ionization MOSFETs (I-MOS) provide an avenue for steepslope device realization. High-mobility narrow gap III-V semiconductor channel materials have not yet been investigated for I-MOS applications. We hereby report E-mode narrow bandgap GaInAs-based I-MOS devices with an SS of 1.25 mV/dec maintained over five orders of magnitude in drain current and I ON /I OFF ratios >10 6 at 300 K (>10 9 at 15 K) for a gate length of L G = 100 nm. Part I of this work focuses on the materials and device fabrication and analysis, device dc characterization, and modeling. The present GaInAs devices are the first I-MOS transistors to display a robust steep-slope effect at low voltages V DS < 1.9 V at 300 K and <1 V at 15 K. Part II describes the dynamic switching (including clarifications on the role of hysteresis) and RF characteristics of GaInAs I-MOS devices and benchmarks them with respect to other steep-slope technologies.

show abstract

Section: A Gainas I-mos Steep-slope Switching Characteristicsmentioning

confidence: 99%

mentioning

confidence: 99%

High-Speed Steep-Slope GaInAs Impact Ionization MOSFETs (I-MOS) With SS = 1.25 mV/dec—Part I: Material and Device Characterization, DC Performance, and Simulation

Han¹,

Bonomo²,

Ruiz³

et al. 2022

IEEE Trans. Electron Devices

Self Cite

View full text Add to dashboard Cite

show abstract

“…For strictly high-frequency applications such as in LNAs, the combination of QW and gate oxide -the MOSHEMT structure -is promising to optimize the trade-off between gate leakage and the scalability of gain and currents [54], [55]. Scaling of HEMTs to ultra-short gate lengths <20 nm must be accompanied by scaling of the gate barrier to avoid short-channel effects.…”

Section: Iii-v Performance Boostersmentioning

confidence: 99%

III-V-on-Si transistor technologies: Performance boosters and integration

Caimi

Schmid

Morf

et al. 2021

Solid-State Electronics

View full text Add to dashboard Cite

“…Many passivation materials have been investigated to effectively passivate the surface of AlGaAs/InGaAs [ 6 ] and InAlAs/InGaAs/InP [ 7 ] HEMTs by using either a wet or dry process. The performance of AlGaN/GaN HEMT technology is limited by charge trapping effects.…”

Section: Introductionmentioning

confidence: 99%

Large-Signal Linearity and High-Frequency Noise of Passivated AlGaN/GaN High-Electron Mobility Transistors

Lin

2020

Micromachines

View full text Add to dashboard Cite

This study proposes AlGaN/GaN/silicon high-electron mobility transistors (HEMTs) grown by a metallorganic chemical vapor deposition (MOCVD) system. The large-signal linearity and high-frequency noise of HEMTs without and with different passivation layers are compared. The experimental data show that the addition of a TiO2 passivation layer to undoped AlGaN/GaN HEMT’s increases the value of the third-order intercept point (OIP3) by up to 70% at 2.4 GHz. Furthermore, the minimum noise figure (NFmin) of the HEMT with TiO2 passivation is significantly reduced.

show abstract

Low-Noise Microwave Performance of 30 nm GaInAs MOS-HEMTs: Comparison to Low-Noise HEMTs

Cited by 7 publications

References 20 publications

High-Speed Steep-Slope GaInAs Impact Ionization MOSFETs (I-MOS) With SS = 1.25 mV/dec—Part I: Material and Device Characterization, DC Performance, and Simulation

High-Speed Steep-Slope GaInAs Impact Ionization MOSFETs (I-MOS) With SS = 1.25 mV/dec—Part I: Material and Device Characterization, DC Performance, and Simulation

III-V-on-Si transistor technologies: Performance boosters and integration

Large-Signal Linearity and High-Frequency Noise of Passivated AlGaN/GaN High-Electron Mobility Transistors

Contact Info

Product

Resources

About