Low-Noise Mid-Wavelength Infrared Avalanche Photodiodes

Abstract

Mid-wavelength infrared (MWIR) p + -n --n + avalanche photodiodes (APDs) were fabricated using two materials systems, one with mercury cadmium telluride (HgCdTe) on a silicon (Si) substrate and the other with an indium arsenide/gallium antimonide (InAs/GaSb) strained layer superlattice (SLS). Diode characteristics, avalanche characteristics, and excess noise factors were measured for both sets of devices. Maximum zero-bias resistance times active area (R 0 A) of 3 9 10 6 X cm 2 and 1.1 9 10 6 X cm 2 and maximum multiplication gains of 1250 at -10 V and 1800 at -20 V were measured for the HgCdTe and the SLS, respectively, at 77 K. Gains reduce to 200 in either case at 120 K. Excess noise factors were almost constant with increasing gain and were measured in the range of 1 to 1.2.

HgCdTe e-avalanche photodiode detector arrays

“…Gain reported by other groups is in the range of 100-1000 at 8 V reverse bias. 7,12,17 Measured exponential gain has been fitted with the Shockley's localized impact ionization model. Gain varies with applied bias in accordance with width of the depletion region.…”

“…[1][2][3][4][5][6][7][8] Passive imaging mode is used to spot the potential targets using a wider field of view. Active imaging mode with narrower field of view is used for higher resolution imaging of the targets of interest and range determination.…”

“…High gain with ultra low excess noise factor has been reported in MWIR HgCdTe e-APDs by several groups. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] Results on design, fabrication and characterization of e-APD detector arrays using LPE grown p-HgCdTe epilayers are presented in this paper. Consideration of active cum passive modes of operation has been kept in mind in the development of these detector arrays.…”

Infrared Avalanche Photodiode Detectors

“…HgCdTe APD is an attractive choice for many IR applications such as LIDAR/ LADAR, defence, night vision, optical communications & atmospheric studies [9][10][11][45][46] . HgCdTe based SWIR APDs can be used as sensor in the LADAR system or 3-D imaging applications 40,[47][48][49][50][51][52][53][54][55][56][57][58][59][60] . CEA-LETI has been involved in the development of HgCdTe based e-APD focal plane array for Passive (thermal imaging) and active (2D/3D flash LADAR imaging) imaging since last a few years.…”

HgCdTe avalanche photodiodes: A review

“…HgCdTe based APD arrays to detect low photon flux with a very short integration time are being developed for space and defence applications [72][73][74][75][76][77][78][79][80][81][82][83][84][85]. HgCdTe APDs are being fabricated in deferent types of architecture (Planar and HDVIP, etc.)…”