Low Operating Voltage and Immediate Read‐After‐Write of HZO‐Based Si Ferroelectric Field‐Effect Transistors with High Endurance and Retention Characteristics
Bong Ho Kim,
Song‐Hyeon Kuk,
Seong Kwang Kim
et al.
Abstract:The study demonstrates HfZrOx (HZO)‐based Si ferroelectric field‐effect transistors (FeFETs) with a low operating voltage (1.5 V) and immediate read‐after‐write operation (100 ns) via HZO thickness scaling, electron‐beam‐irradiation (EBI) treatment, and interfacial layer (IL) scavenging. With these three strategies, reduced operating voltage, immediate read‐after‐write capability, and improved endurance (>108 cycles) and retention (extrapolated 10‐year) characteristics are achieved in FeFETs. The improved c… Show more
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