Low optical loss germanosilicate planar waveguides by low-pressure inductively coupled plasma-enhanced chemical vapor deposition

Zhang, Q.Y; Pita, K.; Ho, Charles Kin Fai; Ngo, Nam Quoc; Zuo, L.P.; Takahashi, Shiro

doi:10.1016/s0009-2614(02)01837-7

Cited by 20 publications

(12 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Tetramethoxygermanium has been used previously in a plasma enhanced chemical vapour deposition processes to deposit germanium-doped silica. 13 The precursor exhibited good vapour draw transport at room temperature using an ALD-valve opening time of between 0.2 and 0.3 seconds. GEME does not form a deposit with water vapour at substrate temperatures between 100 C and 300 C. In the presence of the growing OH-terminated ALD ZnO film, the GEME reaction with water is catalysed, promoting germanium incorporation.…”

Section: Resultsmentioning

confidence: 99%

Atomic layer deposition of germanium-doped zinc oxide films with tuneable ultraviolet emission

et al. 2012

View full text Add to dashboard Cite

Section: Resultsmentioning

confidence: 99%

Atomic layer deposition of germanium-doped zinc oxide films with tuneable ultraviolet emission

et al. 2012

View full text Add to dashboard Cite

“…Thin films consisting of SiO 2 and GeO 2 multilayers have been investigated in the past, both from solution and vapor deposition methods [19][20][21] , with the focus being mostly on their optical properties. In this work, we show that using tetrakis(dimethylamino) germanium (IV) (TDMAGe) as precursor, it is possible to deposit GeO 2 , as well as SiO 2 /GeO 2 multilayers by thermal ALD.…”

mentioning

confidence: 99%

Atomic Layer Deposition of SiO$_2$-GeO$_2$ multilayers

Antoja-Lleonart,

Zhou,

de Hond

et al. 2020

Preprint

View full text Add to dashboard Cite

Despite its interest for CMOS applications, Atomic Layer Deposition (ALD) of GeO 2 thin films, by itself or in combination with SiO 2 , has not been widely investigated yet. Here we report the ALD growth of SiO 2 /GeO 2 multilayers on Silicon substrates using a so far unreported Ge precursor. The characterization of multilayers with various periodicities reveals successful layer-by-layer growth with electron density contrast and absence of chemical intermixing, down to a periodicity of 2 atomic layers.

show abstract

“…Details of the experimental conditions were described in Ref. 5. Trench gap-filling results were observed by scanning electron microscopy.…”

mentioning

confidence: 99%

Athermal silica-based interferometer-type planar light-wave circuits realized by a multicore fabrication method

et al. 2003

View full text Add to dashboard Cite

Athermal silica-based interferometer-type planar light-wave circuits were realized by a newly developed multicore fabrication method. In this method, inductively coupled chemical-vapor deposition and polishing technologies are adopted on a silica substrate with a trench-type waveguide pattern prepared by reactive ion etching. Two kinds of deposited core material, 10GeO2-90SiO2 (mol. %) and 8GeO2-5B2O3-87SiO2 (mol. %), which show wavelength temperature dependence of 9.7 and 8.1 pm/degree C, respectively, were used to prepare the waveguide sections in a device. By adjustment of the lengths of waveguide sections with these two different core materials, athermal characteristics of less than 0.5 pm/degree C were achieved for Mach-Zehnder interferometer filter devices at the 1.55-microm wavelength range while the temperature varied from -20 to 80 degrees C. The new method is also applicable for the preparation of many other kinds of functional devices.

show abstract

Low optical loss germanosilicate planar waveguides by low-pressure inductively coupled plasma-enhanced chemical vapor deposition

Cited by 20 publications

References 17 publications

Atomic layer deposition of germanium-doped zinc oxide films with tuneable ultraviolet emission

Atomic layer deposition of germanium-doped zinc oxide films with tuneable ultraviolet emission

Atomic Layer Deposition of SiO$_2$-GeO$_2$ multilayers

Athermal silica-based interferometer-type planar light-wave circuits realized by a multicore fabrication method

Contact Info

Product

Resources

About