Low-power 20-Gb/s SiGe BiCMOS driver with 2.5 V output swing

Sedighi, Behnam; Ostrovskyy, P.; Scheytt, J. Christoph

doi:10.1109/mwsym.2012.6259502

Cited by 3 publications

(1 citation statement)

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“…The voltage breakdown in transistors was prevented using an adaptive biasing mechanism that controlled the base voltage of the output transistor. A more detailed description for the fabrication and performance of the driver is given in [9]. To make the driver electronic circuit compliant with SOI boards, flip-chip mounting compatible pads and alignment features have been defined on the chip surface, allowing proper horizontal and vertical face down interconnecting.…”

Section: Fabricationmentioning

confidence: 99%

Demonstration of a Hybrid Opto-Electronic Transmitter on SoI for Access Networks

Stamatiadis¹,

Mekonnen²,

Winzer

et al. 2014

IEEE Photon. Technol. Lett.

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We present a hybrid integrated transmitter comprised of an InP/InGaAsP electro-absorption modulated laser (EML) electrically driven by a BiCMOS SiGe electronic circuit on 4-µm SoI substrate. The EML includes an electro-absorption modulator integrated together with a distributed feedback laser and a spot-size expander. The modulator driver is fabricated using the SiGe BiCMOS approach with 2.5 V p-p nominal output swing. Both elements have been flip-chip mounted on a thick SoI board using 14-µm gold-tin bumps and employing a high accuracy flip-chip bonder. The photonic chip has a footprint of 7 mm 2 and consumes a power of 0.8 W. We test the device optically and electrically demonstrating error-free operation at 10 and 20 Gb/s. Index Terms-Hybrid photonic integration, silicon-oninsulator, opto-electronic devices, optical access, fiber to the home (FTTH).

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Section: Fabricationmentioning

confidence: 99%