Low power and high uniformity of HfOx-based RRAM via tip-enhanced electric fields

Abstract

In this paper, the HfOx-based resistive random access memory (RRAM) devices with sub-100 nm pyramid-type electrodes were fabricated. With the help of tip-enhanced electric field around the pyramid-type electrodes, it was experimentally demonstrated that the novel devices have better cycle-to-cycle variation control, lower forming/set voltage (1.97/0.7 V) and faster switching speed ( 30 ns under 0.9 V pulse) as well as better endurance reliability than conventional flat electrode resistive memory devices. In addition, the novel RRAM is experimentally demonstrated with independence of electrode number for the first time to present great potential in scaling down. This novel structure metal-oxide based RRAM will be suitable for the future low-power non-volatile memory application.

A dual-functional Ta/TaOx/Ru device with both nonlinear selector and resistive switching behaviors

“…To achieve large-scale arrays, a stable and uniform resistive switching device is a basic requirement. 12 Moreover, sneak path issue is a severe challenge caused by the leakage current from undesignated cells in an array, which causes a limitation of array size and read/write errors. To overcome the sneak path issue, selection devices (selector) such as diode, 13 threshold switching device, [14][15][16][17][18][19][20] tunnelling device [21][22][23][24] are proposed in series with the memristor device for conguring a one selector one resistor (1S1R) architecture.…”

Three-Dimensional Resistive Random-Access Memory Based on Stacked Double-Tip Silicon Nanowires for Neuromorphic Systems

“…To address these issues, researchers have focused on electric-field concentration via specialized BE geometries, such as pyramid − or tip , structures. These designs localize the electric field to the sharpened regions of the BE, allowing precise control of CF formation.…”

“…The location, dimension, and composition of the CFs vary from cycle to cycle and from cell to cell, leading to an inherently unpredictable switching process. This randomness in RRAM switching manifests as notable variations in the device resistance and switching voltages. − …”

CMOS-compatible wafer-scale Si subulate array for superb switching uniformity of RRAM with localized nanofilaments

“…In addition, electron beam-induced deposition has been presented to vary the nanotip geometries [31]. And electron beam lithography has been utilized to shrink the diameter of the pyramid-type electrodes down to sub-100 nm [32]. And the minimum diameter of the nanotip modulated by ion irradiation combined with a replica-molding process on polyethylene terephthalate substrates can reach approximately 50 nm [33].…”