Low-power CMOS integrated circuits for radio frequency applications

Deen, M. Jamal; Murji, R.; Fakhr, A.; Jafferali, N.; Ngan, W.L.

doi:10.1049/ip-cds:20045069

Cited by 53 publications

(42 citation statements)

References 37 publications

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“…A figure of merit (FoM) demonstrates a value from the overall parameters of a mixer for performance comparison. FoM is represented as [18] FoM = 20 log(f RF ) + CG − NF + IIP 3 − 10 log(P c ).…”

Section: Measurement Resultsmentioning

confidence: 99%

A Broadband High Linearity Current-Reuse Bulk-Controlled Mixer for 4g Applications

Wei¹,

Hsiao²,

Weng³

2013

PIER

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Abstract-A high linearity down-conversion mixer for the application of the fourth generation (4G) mobile communication systems is presented. The presented 2.3 to 5.8 GHz broadband mixer adopts current-reused and bulk-controlled techniques.The linearized transconductor stage is composed of the CMOS amplifiers and the bulk-controlled compensation (BCC) transistors. The bulk-controlled voltage is applied to adjust the threshold voltage of the BCC transistor. Thus, the equivalent third-order intermodulation (IM3) term of the CMOS amplifiers and the BCC transistors can be mitigated so as to improve the linearity. Furthermore, the current-reused architecture enhances the conversion gain of the proposed mixer and compensates the loss caused by the shunt feedback matching network. The presented mixer consumes 4.8 mA from a 1.5 V power supply. The measurement results of the mixer exhibit the maximum power conversion gain of 11.3 dB. The input third-order intercept point (IIP3) of 4.7 dBm over the entire 2.3-5.8 GHz band is observed.

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Section: Measurement Resultsmentioning

confidence: 99%

A Broadband High Linearity Current-Reuse Bulk-Controlled Mixer for 4g Applications

Wei¹,

Hsiao²,

Weng³

2013

PIER

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“…Traditional RF design techniques are often not the optimum choices for low-power ubiquitous wireless systems [19]. Short transmission distances imply that simple frontends are suitable.…”

Section: Low-voltage and Low-power System Level Designmentioning

confidence: 99%

Current status of CMOS low voltage and low power wireless IC designs

Tsang

El-Gamal

Iniewski

et al. 2007

Analog Integr Circ Sig Process

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This paper surveys recent research on CMOS low voltage and low power IC designs for wireless applications. Advancements and challenges in using nanometer IC processes are addressed, and the impacts of device scaling on wireless systems are discussed. Recent advances in device technologies and system architectures are presented. Stateof-the-art low power wireless systems, both from academia and from industry, are summarized. Circuit design techniques and challenges for low voltage and low power applications are discussed, along with RF performance and power trade-offs. Examples of common RF building blocks, e.g. LNA's and VCO's, designed for sub-1V power supplies are presented.

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“…In this region, the total drain current is given by (3) and the transconductance by (4) [8]. The transistor enters the saturation region when the drain-source voltage becomes higher than the thermal voltage by a factor of three to four.…”

Section: Analysis Of An Unbalanced Differential Source-coupled Pair Wmentioning

confidence: 99%

“…MOS pseudologarithmic half-wave and full-wave rectifiers are presented in [10] based on the same principle. In [3,14] the circuit shown in Fig. 10 is studied for both differential and single-ended output cases where the M1-M4 MOSFET devices are biased in the saturation regime.…”

Section: Analysis and Design Of An Unbalanced Gilbert Cell With Mosfementioning

confidence: 99%

Ultra-Wideband, Low-Power, Inductorless, 3.1–4.8 GHz, CMOS VCO

Τσίτουρας

Plessas

2010

Circuits Syst Signal Process

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A low-power, inductorless, UWB CMOS voltage controlled oscillator is designed in 0.18 µm CMOS technology targeting to a UWBFM transmitter application. The VCO is a Double-Cross-Coupled Multivibrator and generates output frequencies ranging from 1.55 GHz to 2.4 GHz. A low-power frequency doubler based on a Gilbert cell, which operates in weak inversion, doubles the VCO tuning range from 3.1 GHz to 4.8 GHz. The proportionality between the oscillation frequency and the bias current is avoided in this case for the entire achieved tuning range resulting in a low-power design. The selected architecture provides high suppression, over 45 dB, for the 1 st and 3 rd harmonics, while enabling high-frequency operation and conversion gain due to the unbalanced structure and the single-ended output. The proposed VCO draws 4 mA from a 1.8 V supply, it has a phase noise of −76.7 dBc/Hz at 1 MHz offset from the center frequency, while it exhibits a very high ratio of tuning range (43%) over power consumption equal to 7.76 dB.

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Low-power CMOS integrated circuits for radio frequency applications

Cited by 53 publications

References 37 publications

A Broadband High Linearity Current-Reuse Bulk-Controlled Mixer for 4g Applications

A Broadband High Linearity Current-Reuse Bulk-Controlled Mixer for 4g Applications

Current status of CMOS low voltage and low power wireless IC designs

Ultra-Wideband, Low-Power, Inductorless, 3.1–4.8 GHz, CMOS VCO

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