Low power low temperature poly-Si thin-film transistor shift register with DC-type output driver

Song, Seok-Jeong; Kim, Byung Hoon; Jang, Jin; Nam, Hyoungsik

doi:10.1016/j.sse.2015.06.010

Cited by 12 publications

(9 citation statements)

References 15 publications

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“…However, a‐Si TFTs exhibit low mobility compared to poly‐Si and oxide TFTs, so that a‐Si TFTs are not applicable for high performance display. Consequently, poly‐Si and oxide TFTs have been researched for gate driver 5–10 …”

Section: Introductionmentioning

confidence: 99%

“…Consequently, poly-Si and oxide TFTs have been researched for gate driver. [5][6][7][8][9][10] Low-temperature polycrystalline silicon (LTPS) TFTs have been mainly utilized for TFT backplane technology of small size display such as mobile display. LTPS TFTs exhibit high mobility and good stability.…”

Section: Introductionmentioning

confidence: 99%

“…5 However, high off-state current of LTPS TFTs makes it difficult to achieve low power consumption display. 6 On the other hand, a-IGZO TFTs exhibit ultra-low off-state current. 7 However, the low on-state current driving capability compared with LTPS TFTs induces high power consumption.…”

Section: Introductionmentioning

confidence: 99%

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Gate driver with low‐temperature polycrystalline silicon and oxide thin‐film‐transistor circuits for low power consumption and narrow bezel AMOLED displays

Kim

Jang

2022

J Soc Info Display

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We propose a novel gate driver circuit using low-temperature polycrystalline silicon and oxide (LTPO) thin-film transistors (TFTs). The proposed circuit consists of only six TFTs, four p-type LTPS, and two n-type a-IGZO TFTs, without capacitor. The proposed circuit operates well when oxide TFTs have threshold voltage (V TH ) of À7.5 V, which is very depletion mode. Without bootstrapping, low gate bias stress occurs on TFTs in the proposed circuit. With dual gate (DG) structure of oxide TFTs, the stability of the proposed circuit is improved. In addition, by utilizing extremely low off-state current of oxide TFTs, ultra-low power consumption can be achieved. The total power consumption of the proposed gate driver is less than 100 mW under a-IGZO TFT's V TH of À6 V at 120 Hz 4k (3,840 Â 2,160) resolution display. The fabricated circuit works perfectly at a pulse width of 1 μs equivalent to operating speed of 500 kHz. The proposed circuit can be applied to ultra-high definition (UHD) and narrow bezel AMOLED display. K E Y W O R D Sdepletion mode, gate driver, low-temperature polycrystalline silicon and oxide (LTPO), power consumption, reliability, thin-film transistor (TFT)

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Gate driver with low‐temperature polycrystalline silicon and oxide thin‐film‐transistor circuits for low power consumption and narrow bezel AMOLED displays

Kim

Jang

2022

J Soc Info Display

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“…To cope with this crosstalk artifact while increasing the touch reporting rate, an in‐cell touch panel conducts touch sensing and displays scanning operations separately based on a time division driving method (TDDM) . In addition, the overall cost of display manufacturing is further reduced by implementing gate driver circuits with thin film transistors (TFTs) on a panel . In the TDDM, the display area is divided into several blocks in between which touches are detected.…”

Section: Introductionmentioning

confidence: 99%

“…6 In addition, the overall cost of display manufacturing is further reduced by implementing gate driver circuits with thin film transistors (TFTs) on a panel. [7][8][9][10][11][12][13][14] In the TDDM, the display area is divided into several blocks in between which touches are detected. That is, the touch sensing starts after completing the scanning of a certain display block and the next block scanning continues after the touch sensing is carried out.…”

Section: Introductionmentioning

confidence: 99%

Robust integrated shift register circuit over clock noises for in‐cell touch applications

Seo

Nam

2017

J Soc Info Display

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This paper proposes an integrated shift register circuit for an in‐cell touch panel that is robust over clock noises. It is composed of 10 thin film transistors and 1 capacitor, and the time division driving method is adopted to prevent the negative effect of display signals on the touch sensing. Two pre‐charging nodes are employed for reducing the uniformity degradation of gate pulses over time. In particular, the proposed circuit connects a drain of the first pre‐charging node's pull‐up thin film transistor (TFT) to the positive supply voltage instead of clock signals. This facilitates to lower coupling noises as well as to clock power consumption. The simulation program with an integrated circuit emphasis is conducted for the proposed circuit with low temperature poly‐silicon TFTs. The positive threshold voltage that shifts up to 12 V at the first pre‐charging pull‐up TFT can be compensated for without the uniformity degradation of gate pulses. For a 60‐Hz full‐HD display with a 120‐Hz reporting rate of touches, the clock power consumption of the proposed gate driver circuit is estimated as 7.13 mW with 160 stages of shift registers. In addition, the noise level at the first pre‐charging node is lowered to −28.95 dB compared with 2.37 dB of the previous circuit.

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Applications of Oxide Thin Film Transistors

2024

Oxide Thin Film Transistors

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Low power low temperature poly-Si thin-film transistor shift register with DC-type output driver

Cited by 12 publications

References 15 publications

Gate driver with low‐temperature polycrystalline silicon and oxide thin‐film‐transistor circuits for low power consumption and narrow bezel AMOLED displays

Gate driver with low‐temperature polycrystalline silicon and oxide thin‐film‐transistor circuits for low power consumption and narrow bezel AMOLED displays

Robust integrated shift register circuit over clock noises for in‐cell touch applications

Applications of Oxide Thin Film Transistors

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