Low-Power MOS-Capacitor Based Silicon Photonic Modulators and CMOS Drivers

Webster, M.; Lakshmikumar, K.R.; Appel, Craig; Muzio, C.; Dama, B.; Shastri, K.R.

doi:10.1364/ofc.2015.w4h.3

Cited by 46 publications

(31 citation statements)

References 2 publications

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“…Zi,n+1(s) (8) where g meff,n is the total transconductance of the CMOS inverter, g mn,n + g mp,n , and g 0eff,n is its total output conductance g 0n,n + g 0p,n . The feedback term Z F,n (s) is equal to R F,n for the resistive feedback case and to R F,n + sL F,n for the R-L feedback case.…”

Section: B Large-bandwidth Preamplifier Chainmentioning

confidence: 99%

“…However, the linearity and large voltage swing (>4 V) required to drive the highest speed photonics modulators [4]- [6] and the linear, low noise, and high-dynamic-range receiver operation pose significant challenges in nanoscale CMOS technologies. Recently reported 25-32 Gbaud silicon photonics (SiPh) systems employ CMOS-inverter based modulator drivers with limited output voltage swing of 2 V PP [7], [8]. Although a 65nm CMOS driver with 6.4V PP differential swing (3.2V PP per side) has been reported recently [9], its speed is limited to 25 Gb/s and the circuit topology is not scalable to 28 nm and more advanced CMOS nodes because of junction breakdown.…”

Section: Introductionmentioning

confidence: 99%

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A <inline-formula> <tex-math notation="LaTeX">$3\times 60\;\text{Gb/s}$</tex-math> </inline-formula> Transmitter/Repeater Front-End With <inline-formula> <tex-math notation="LaTeX">$4.3\;{\rm V}_{\rm PP}$</tex-math> </inline-formula> Single-Ended Output Swing in a 28nm UTBB FD-SOI Technology

Shopov

2016

IEEE J. Solid-State Circuits

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A versatile three-lane transmitter/repeater array was designed and manufactured in a production 28nm ultra-thin body and BOX (UTBB) FD-SOI CMOS technology. Each lane in the array can operate at 60 Gb/s with adjustable output swing between 2.6 and 4.3 VPP with a measured input sensitivity of 10 mVPP at 40 Gb/s, and requires at least 40mVPP input signal level to fully saturate the output driver for maximum swing operation at 60 Gb/s. Scaled, cascaded single-ended CMOS inverter transimpedance amplifiers with resistive and inductive feedback and interstage series inductive peaking were used to form the preamplifiers of each lane. These were optimized for maximum bandwidth and large gain, and drive the >4V PP swing seriesstacked cascoded CMOS inverter output stage. The single-ended CMOS-inverter topologies ensure that the total power consumption scales with the data rate and reduce the lane footprint to that of a ground-signal pad I/O. The measured lane-to-lane isolation is better than 40 dB up to 55 GHz, while the measured Tx-toRx dynamic range, defined as the ratio of the maximum output swing and corresponding minimum input voltage and sensitivity, is larger than 54 dB up to 40 Gb/s.

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Section: B Large-bandwidth Preamplifier Chainmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A <inline-formula> <tex-math notation="LaTeX">$3\times 60\;\text{Gb/s}$</tex-math> </inline-formula> Transmitter/Repeater Front-End With <inline-formula> <tex-math notation="LaTeX">$4.3\;{\rm V}_{\rm PP}$</tex-math> </inline-formula> Single-Ended Output Swing in a 28nm UTBB FD-SOI Technology

Shopov

2016

IEEE J. Solid-State Circuits

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“…The concept already dates back to 1980 [3], but due to the advancements in OOK signaling it was not until recent that segmented transmitters regained attention. In the light of 100 GbE development several PAM-4 transmitters using two binary weigthed segments were demonstrated [4]- [6]. 10 Gbit/s PAM-8 intensity modulation was shown with a hybrid configuration of a 3-bit SEMZM and an electrical DAC [7].…”

Section: Introductionmentioning

confidence: 99%

Segmented Optical Transmitter Comprising a CMOS Driver Array and an InP IQ-MZM for Advanced Modulation Formats

Vanhoecke

Aimone

Argyris

et al. 2017

J. Lightwave Technol.

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Abstract-Segmented Mach-Zehnder modulators are a promising solution to generate complex modulation schemes in the migration towards optical links with a higher-spectral efficiency. We present an optical transmitter comprising a segmentedelectrode InP IQ-MZM, capable of multi-level optical signal generation (5-bit per I/Q arm) by employing direct digital drive from integrated, low-power (1 W) CMOS binary drivers. We discuss the advantages and design trade-offs of the segmented driver structure and the implementation in a 40 nm CMOS technology. Multi-level operation with combined phase and amplitude modulation is demonstrated experimentally on a single MZM of the device for 2-ASK-2PSK and 4-ASK-2-PSK, showing potential for respectively 16-QAM and 64-QAM modulation in future assemblies.

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Section: Introductionmentioning

confidence: 99%

“…Advanced modulation formats can be used when operating these devices aiming to increase their spectral efficiency and enhance the device speed, reaching values that can exceed 100 Gb/s. Among the proposed solutions pulse amplitude modulation (PAM) and discrete multi-tone (DMT) formats have been recently identified as ideal candidates for developing the next generation of 100 Gb/s silicon photonic-based direct-detection links [4,5].Here we review our progress on the design and fabrication of silicon photonic modulators for high speed optical links. We show our recent results on PAM and DMT transmissions over unrepeatered optical links, demonstrating that 10G-class silicon photonic components can be used to generate high bit rate (50 Gb/s) signals with unprecedented spectral efficiencies, paving the way for the realization of low cost, compact direct-detection transceivers for short-reach applications (<100 km) exhibiting aggregate data rates in excess of 400 Gb/s.…”

mentioning

confidence: 99%

Silicon Photonic Modulators for High Speed Optical Analog Links

Lacava

Thomson

et al. 2017

Advanced Photonics 2017 (IPR, NOMA, Sensors, Networks, SPPCom, PS)

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Abstract:We discuss recent progress on the design of silicon photonic modulators for high speed digital and analog optical links and their implementation using advanced modulation formats (including PAM and DMT). The field of silicon photonics has rapidly progressed in the last decade and a large amount of research has been performed both in academia and in the industry. A variety of devices have been demonstrated serving a wide range of applications, such as sensing, data communications and all-optical signal processing, showing remarkable performance [1]. The area of optical communications in particular, is key to silicon photonics and represents the major driver in advancing this technology. A number of key components for optical communications are now available in silicon photonics, including optical modulators, filters, receivers and optical signal processor devicesThe optical intensity modulator represents one of the key components of an optical transmitter, thus a lot of efforts have been made in advancing the performance of this device [3]. Much research has focused on reducing the cost and power consumption of silicon modulators, while increasing their bandwidth at the same time, and components showing notable performance are now available to the community. On-off-keying (OOK)-operated devices exhibiting speeds that exceed 50 Gb/s have been demonstrated with power consumption of a few pJ/bit. Advanced modulation formats can be used when operating these devices aiming to increase their spectral efficiency and enhance the device speed, reaching values that can exceed 100 Gb/s. Among the proposed solutions pulse amplitude modulation (PAM) and discrete multi-tone (DMT) formats have been recently identified as ideal candidates for developing the next generation of 100 Gb/s silicon photonic-based direct-detection links [4,5].Here we review our progress on the design and fabrication of silicon photonic modulators for high speed optical links. We show our recent results on PAM and DMT transmissions over unrepeatered optical links, demonstrating that 10G-class silicon photonic components can be used to generate high bit rate (50 Gb/s) signals with unprecedented spectral efficiencies, paving the way for the realization of low cost, compact direct-detection transceivers for short-reach applications (<100 km) exhibiting aggregate data rates in excess of 400 Gb/s.

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Low-Power MOS-Capacitor Based Silicon Photonic Modulators and CMOS Drivers

Cited by 46 publications

References 2 publications

A <inline-formula> <tex-math notation="LaTeX">$3\times 60\;\text{Gb/s}$</tex-math> </inline-formula> Transmitter/Repeater Front-End With <inline-formula> <tex-math notation="LaTeX">$4.3\;{\rm V}_{\rm PP}$</tex-math> </inline-formula> Single-Ended Output Swing in a 28nm UTBB FD-SOI Technology

A <inline-formula> <tex-math notation="LaTeX">$3\times 60\;\text{Gb/s}$</tex-math> </inline-formula> Transmitter/Repeater Front-End With <inline-formula> <tex-math notation="LaTeX">$4.3\;{\rm V}_{\rm PP}$</tex-math> </inline-formula> Single-Ended Output Swing in a 28nm UTBB FD-SOI Technology

Segmented Optical Transmitter Comprising a CMOS Driver Array and an InP IQ-MZM for Advanced Modulation Formats

Silicon Photonic Modulators for High Speed Optical Analog Links

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