Low Power MoS2/Nb2O5 Memtransistor Device with Highly Reliable Heterosynaptic Plasticity (Adv. Funct. Mater. 40/2021)

Nam, Jae Hyeon; Oh, Se‐Young; Jang, Hye Yeon; Kwon, O’Dae; Park, Heejeong; Park, Woojin; Kwon, Jung‐Dae; Kim, Yonghun; Cho, Byungjin

doi:10.1002/adfm.202170294

Cited by 19 publications

(23 citation statements)

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“…Furthermore, stimulated by 0.5 V electrical voltage pulse (with the PSC less than 1.2 × 10 –10 A), the operating power of our electronic synapse can be less than 60 pW, which is lower than that of many 2D materials‐based synapses. [ 44,45 ] The results imply that our device is promising for low‐power applications in neuromorphic computing. Thus, we can make use of a 2D layered BiOI nanosheet to achieve a low‐power memristor and low‐power electronic synapse based on the mechanism as discussed above, and expect to further construct low‐power memory and a neuromorphic system.…”

Section: Resultsmentioning

confidence: 91%

High‐Performance Memristor Based on 2D Layered BiOI Nanosheet for Low‐Power Artificial Optoelectronic Synapses

Lei

Duan

Qin

et al. 2022

Adv Funct Materials

110

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Artificial optoelectronic synapses with both electrical and light‐induced synaptic behaviors have recently been studied for applications in neuromorphic computing and artificial vision systems. However, the combination of visual perception and high‐performance information processing capabilities still faces challenges. In this work, the authors demonstrate a memristor based on 2D bismuth oxyiodide (BiOI) nanosheets that can exhibit bipolar resistive switching (RS) performance as well as electrical and light‐induced synaptic plasticity eminently suitable for low‐power optoelectronic synapses. The fabricated memristor exhibits high‐performance RS behaviors with a high ON/OFF ratio up to 105, an ultralow SET voltage of ≈0.05 V which is one order of magnitude lower than that of most reported memristors based on 2D materials, and low power consumption. Furthermore, the memristor demonstrates not only electrical voltage‐driven long‐term potentiation, depression plasticity, and paired‐pulse facilitation, but also light‐induced short‐ and long‐term plasticity. Moreover, the photonic synapse can be used to simulate the “learning experience” behaviors of human brain. Consequently, not only the memristor based on BiOI nanosheets shows ultra‐low SET voltage and low‐power consumption, but also the optoelectronic synapse provides new material and strategy to construct low‐power retina‐like vision sensors with functions of perceiving and processing information.

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Section: Resultsmentioning

confidence: 91%

High‐Performance Memristor Based on 2D Layered BiOI Nanosheet for Low‐Power Artificial Optoelectronic Synapses

Lei

Duan

Qin

et al. 2022

Adv Funct Materials

110

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“…For example, a Nb 2 O 5 interfacial layer between the MoS 2 channel and the Al 2 O 3 gate dielectric was used to create a larger Schottky barrier, resulting in improved linearity and an increased number (>200) of distinct conductance states. [ 131 ]…”

Section: Memtransistor Materials Mechanisms and Architecturesmentioning

confidence: 99%

Progress and Challenges for Memtransistors in Neuromorphic Circuits and Systems

et al. 2022

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Due to the increasing importance of artificial intelligence (AI), significant recent effort has been devoted to the development of neuromorphic circuits that seek to emulate the energy‐efficient information processing of the brain. While non‐volatile memory (NVM) based on resistive switches, phase‐change memory, and magnetic tunnel junctions has shown potential for implementing neural networks, additional multi‐terminal device concepts are required for more sophisticated bio‐realistic functions. Of particular interest are memtransistors based on low‐dimensional nanomaterials, which are capable of electrostatically tuning memory and learning behavior at the device level. Herein, a conceptual overview of the memtransistor is provided in the context of neuromorphic circuits. Recent progress is surveyed for memtransistors and related multi‐terminal NVM devices including dual‐gated floating‐gate memories, dual‐gated ferroelectric transistors, and dual‐gated van der Waals heterojunctions. The different materials systems and device architectures are classified based on the degree of control and relative tunability of synaptic behavior, with an emphasis on device concepts that harness the reduced dimensionality, weak electrostatic screening, and phase‐changes properties of nanomaterials. Finally, strategies for achieving wafer‐scale integration of memtransistors and multi‐terminal NVM devices are delineated, with specific attention given to the materials challenges for practical neuromorphic circuits.

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“…The development of 2D materials in the field of memristors has a long history due to the characteristics that are beneficial to the resistance switching behaviors, such as large specific surface area, adjustable band‐gap, and high mobility. [ 165–167 ] A large number of researchers have found the resistive switching behavior in 2D materials, such as graphene and its derivatives, [ 128,168,169 ] molybdenum disulfide, [ 170,171 ] tungsten disulfide, [ 172,173 ] and hexagonal boron nitride, [ 174,175 ] while the 2D materials are not performed in photonic memristive devices until its concept is proposed in recent years. Even though there are many methods to prepare 2D materials, such as mechanical peel‐off, chemical vapor deposition and sol–gel process, the performances of the 2D materials prepared by various methods are different in memristor due to the limitations of the preparation conditions, which means that the optimization potential of the same 2D material in the photonic memristive and memristive‐like devices is enormous.…”

Section: Active Materials For Photonic Memristive and Memristive‐like...mentioning

confidence: 99%

Advances in Emerging Photonic Memristive and Memristive‐Like Devices

et al. 2022

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Possessing the merits of high efficiency, low consumption, and versatility, emerging photonic memristive and memristive-like devices exhibit an attractive future in constructing novel neuromorphic computing and miniaturized bionic electronic system. Recently, the potential of various emerging materials and structures for photonic memristive and memristive-like devices has attracted tremendous research efforts, generating various novel theories, mechanisms, and applications. Limited by the ambiguity of the mechanism and the reliability of the material, the development and commercialization of such devices are still rare and in their infancy. Therefore, a detailed and systematic review of photonic memristive and memristive-like devices is needed to further promote its development. In this review, the resistive switching mechanisms of photonic memristive and memristive-like devices are first elaborated. Then, a systematic investigation of the active materials, which induce a pivotal influence in the overall performance of photonic memristive and memristive-like devices, is highlighted and evaluated in various indicators. Finally, the recent advanced applications are summarized and discussed. In a word, it is believed that this review provides an extensive impact on many fields of photonic memristive and memristive-like devices, and lay a foundation for academic research and commercial applications.

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Low Power MoS₂/Nb₂O₅ Memtransistor Device with Highly Reliable Heterosynaptic Plasticity (Adv. Funct. Mater. 40/2021)

Cited by 19 publications

References 0 publications

High‐Performance Memristor Based on 2D Layered BiOI Nanosheet for Low‐Power Artificial Optoelectronic Synapses

High‐Performance Memristor Based on 2D Layered BiOI Nanosheet for Low‐Power Artificial Optoelectronic Synapses

Progress and Challenges for Memtransistors in Neuromorphic Circuits and Systems

Advances in Emerging Photonic Memristive and Memristive‐Like Devices

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