Low-Power, Self-Rectifying, and Forming-Free Memristor with an Asymmetric Programing Voltage for a High-Density Crossbar Application

Abstract

A Pt/NbO/TiO/NbO/TiN stack integrated on a 30 nm contact via shows a programming current as low as 10 nA and 1 pA for the set and reset switching, respectively, and a self-rectifying ratio as high as ∼10, which are suitable characteristics for low-power memristor applications. It also shows a forming-free characteristic. A charge-trap-associated switching model is proposed to account for this self-rectifying memrisive behavior. In addition, an asymmetric voltage scheme (AVS) to decrease the write power consumption by utilizing this self-rectifying memristor is also described. When the device is used in a 1000 × 1000 crossbar array with the AVS, the programming power can be decreased to 8.0% of the power consumption of a conventional biasing scheme. If the AVS is combined with a nonlinear selector, a power consumption reduction to 0.31% of the reference value is possible.

Analogue signal and image processing with large memristor crossbars

“…Compared with passive arrays that use highly nonlinear memristors 14,[37][38][39] or discrete selector devices [40][41][42][43] to mitigate the sneak path current problem, the 1T1R scheme has a lower packing density (2.5 times the cell area). However, it allows us to independently access memristors with a linear current-voltage (I-V) relation in an array with the transistor gate control, so each memristor's conductance can be precisely tuned.…”

Simultaneous implementation of resistive switching and rectifying effects in a metal-organic framework with switched hydrogen bond pathway

“…Second, the FJU-23-H 2 O device is electroforming-free with its set voltage of about 0.2 V, far lower than other ion transport-induced RRAMs, indicating that its switching mechanism cannot be assigned to metal ion migration. In general, a repeatable memristive switching behavior in nonproton ion transport-induced RRAMs is always preceded by an electroforming step (42), and after that, a relatively high voltage is required to turn the device to LRS, which increases the operating power of the devices. The set voltage of the RRAM device is the same as the gate voltage, indicating that proton transport probably plays an important role in the RS.…”

Unconventional Inorganic‐Based Memristive Devices for Advanced Intelligent Systems

“…Furthermore, a 3D stacked self‐rectifying memristor array was realized using a fluid‐supported Si membrane technique. Kim et al reported a Pt/NbO x /TiO y /NbO x /TiN (P‐NTN) memristor with a high self‐rectifying property (≈10 5 ) by employing a Pt/NbO x Schottky contact within the cell stack. High cell‐to‐cell uniformity could be achieved because the RS was accomplished by the trapping and detrapping of electrons at the TiO y /NbO x interface, excluding the randomness of CFs formation, which enlarges the cell property distribution.…”

“…In 2008, a physical model of the memristor was experimentally demonstrated by researchers at the Hewlett‐Packard (HP) laboratory using a TiO 2 active layer, the resistance of which was reversibly switched by the applied electrical stimulus . Since then a number of studies on memristive devices related to resistive switching (RS) materials, operation mechanisms, integration methods, and their neuromorphic applications have been widely reported …”