Low-resistance n-type polycrystalline InAs grown by molecular beam epitaxy

Scott, D.; Kadow, C.; Dong, Yingda; Wei, Ying; Gossard, A. C.; Rodwell, M.J.W.

doi:10.1016/j.jcrysgro.2004.03.049

Cited by 12 publications

(13 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The resistivity increases significantly from 26 Ω μm for the 63 nm template opening to 64 Ω μm for the 315 nm opening. This is attributed to an increasing number of grain boundaries in polycrystalline InAs grown in the larger openings which results in more electron trapping and scattering. , We see little change in resistivity with temperature, indicating that the mobility is limited by charged impurity scattering as opposed to phonons …”

mentioning

confidence: 75%

“…This is attributed to an increasing number of grain boundaries in polycrystalline InAs grown in the larger openings which results in more electron trapping and scattering. 23,24 We see little change in resistivity with temperature, indicating that the mobility is limited by charged impurity scattering as opposed to phonons. 25 A crude estimation of the carrier concentration can be obtained by = × × n q…”

mentioning

confidence: 86%

See 1 more Smart Citation

Three-Dimensional Integration of InAs Nanowires by Template-Assisted Selective Epitaxy on Tungsten

et al. 2023

View full text Add to dashboard Cite

3D integration of III-V semiconductors with Si CMOS is highly attractive since it allows combining new functions such as photonic and analog devices with digital signal processing circuitry. Thus far, most 3D integration approaches have used epitaxial growth on Si, layer transfer by wafer bonding, or die-to-die packaging. Here we present low-temperature integration of InAs on W using Si3N4 template assisted selective area metal–organic vapor-phase epitaxy (MOVPE). Despite growth nucleation on polycrystalline W, we can obtain a high yield of single-crystalline InAs nanowires, as observed by transmission electron microscopy (TEM) and electron backscatter diffraction (EBSD). The nanowires exhibit a mobility of 690 cm2/(V s), a low-resistive, Ohmic electrical contact to the W film, and a resistivity which increases with diameter attributed to increased grain boundary scattering. These results demonstrate the feasibility for single-crystalline III-V back-end-of-line integration with a low thermal budget compatible with Si CMOS.

show abstract

mentioning

confidence: 75%

mentioning

confidence: 86%

Three-Dimensional Integration of InAs Nanowires by Template-Assisted Selective Epitaxy on Tungsten

et al. 2023

View full text Add to dashboard Cite

show abstract

“…Because the emitter regrowth is fully epitaxial, it is possible to grow highly conductive materials such as n ++ InP and n ++ InGaAs in contrast to our previous work on polycrystalline emitter regrowth. 7 For doping levels of N D =2ϫ 10 19 cm −3 in InGaAs and InP, Hall measurements on separate samples show electron mobilities of 1900 and 600 cm 2 / V s, respectively. Therefore esh =20 ⍀ / sq.…”

Section: Transistor Designmentioning

confidence: 98%

“…For InP HBTs, the only prior work on emitter regrowth has focused on polycrystalline InAs. [5][6][7] Here we present the first fully epitaxial regrown-emitter InP HBTs. Figure 1 shows a schematic cross-section of the regrownemitter HBT.…”

Section: Introductionmentioning

confidence: 99%

Regrown-emitter InP heterojunction bisucpolar transistors

Kadow

Gossard

Rodwell

2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

We present the molecular beam epidaxy (MBE) growth and the dc device performance of the first fully epitaxial regrown-emitter InP heterojunction bipolar transistors (HBTs). Here the emitter layers are regrown by MBE onto a patterned base–collector template. This process is aimed at reducing the emitter resistance, a key parameter for scaling high speed logic circuits. Emitter resistance is reduced because the emitter contact is formed to an extrinsic emitter larger than the base–emitter junction. Scanning electron microscope images demonstrate controlled, uniform etching to the intrinsic base layer, high-quality epitaxial MBE growth onto the patterned surface, and good sidewall coverage. HBTs with base-emitter junctions ranging from 48×48 to 2.5×2.5μm2 have maximum dc current gains between 5.0 and 7.5. Comparison to regular HBTs shows that the dc current gains are limited by excess base currents. Possible contributions to the excess base currents are discussed. Transmission line method measurements show that low emitter resistance and low base resistance are feasible in this regrown-emitter HBT technology.

show abstract

“…Presently, the highest quality devices are all generated via wafer bonding and epitaxial transfer approaches. − Direct growth approaches often suffer from low material quality due to the formation of nanocrystalline materials or defects if grown on highly mismatched substrates. Most monolithic material integration schemes for back-end compatible materials result in polycrystalline films with maximum reported mobilities on the order of 100 cm 2 /(V s). − Templated liquid phase (TLP) growth has been shown to be a promising route toward growth of crystalline semiconductors on nonepitaxial substrates, − overcoming the limitations of standard vapor phase growth techniques with typical mobilities 2–5 times higher than other monolithic integration schemes.…”

Section: Introductionmentioning

confidence: 99%

Monolithic High-Mobility InAs on Oxide Grown at Low Temperature

Sarkar

Teishima

Ahsan

et al. 2020

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

We demonstrate high electron mobility single-crystal InAs mesas monolithically integrated on amorphous dielectric substrates at a growth temperature of 300 °C. Critically, a room temperature mobility of ∼5800 cm 2 /(V s) was measured, the highest mobility reported for any thin-film semiconductor material system directly grown on a nonepitaxial substrate. Detailed modeling of the scattering mechanisms in the grown material indicates that the mobility is limited by surface roughness scattering, not the intrinsic material quality. We project that reducing the RMS surface roughness of the InAs from 1.8 to 1 nm would produce materials with room temperature mobilities of >10000 cm 2 /(V s), and RMS roughness of 0.5 nm would result in mobility of ∼20000 cm 2 /(V s), essentially identical with epitaxially grown materials. These results pave the way for growth of high-mobility materials directly onto the back end of silicon CMOS wafers and other nonepitaxial substrates such as glass, as well as polymers for flexible electronics.

show abstract

Low-resistance n-type polycrystalline InAs grown by molecular beam epitaxy

Cited by 12 publications

References 14 publications

Three-Dimensional Integration of InAs Nanowires by Template-Assisted Selective Epitaxy on Tungsten

Three-Dimensional Integration of InAs Nanowires by Template-Assisted Selective Epitaxy on Tungsten

Regrown-emitter InP heterojunction bisucpolar transistors

Monolithic High-Mobility InAs on Oxide Grown at Low Temperature

Contact Info

Product

Resources

About