Low resistance, unannealed, Ohmic contacts to p-type In0.27Ga0.73Sb

Abstract

Unannealed Pd∕Pt∕Au contacts to p-type In0.27Ga0.73Sb were fabricated and measured. Relatively high hole mobilities, with respect to similarly doped InP-lattice-matched materials, and associated low sheet resistances were measured for the p-type In0.27Ga0.73Sb material. The unannealed Pd∕Pt∕Au contacts were found to be Ohmic in nature; and for a hole density of 2.9×1019cm−3 and a mobility of 160cm2∕Vs, a specific contact resistance of 7.6×10−8Ωcm2 was measured.

Low resistance, unannealed ohmic contacts to n -type InAs 0.66 Sb 0.34

“…2b) [9]. This hypothesis would also agree with the extremely low r C seen for p-type In 0.27 Ga 0.73 Sb [10].…”

Molecular Beam Epitaxial Regrowth of Antimonide-Based Semiconductors

“…However, for regrowth following 5 min of AHC between 280°C and 370°C, the Hall resistivity is actually lower than for InGaSb grown on InAs without being removed from vacuum, and the hole mobilities approach the highest reported to date for p + III-V semiconductors. 15 Thus, we have successfully fabricated high-quality p + InGaSb regrowth layers, by inserting a thin InAs etch-stop layer after the AlGaSb. This method has great potential to lower the contact and access resistances for InGaSbchannel p-FETs, and is expected to be applicable for other antimonide-based semiconductor materials.…”

Improvement of Ohmic contacts to In0.65Ga0.35Sb using Mo refractory metal and surface preparation for 6.3 Å heterojunction bipolar transistors

“…InGaSb has recently emerged as a potential material for emitter capping layer or base layer of heterojunction bipolar transistor 1 ͑HBT͒ and channel layer of heterostructure field-effect transistor. More recently, Champlain et al 7 investigated unannealed Pd/Pt/Au Ohmic contacts on highly doped p-In 0.73 Ga 0.27 Sb and achieved specific contact resistivities as low as ϳ8 ϫ 10 −8 ⍀ cm 2 for a doping level of 2.9ϫ 10 19 cm −3 . For HBT, specifically shallow, thermally stable Ohmic contacts are needed and reduction in contact resistivities is critical for achieving improved performance as the emitter and base contact resistivities must be reduced by a factor of ␥ −2 in order to increase transistor bandwidths by a factor of ␥, among other requirements.…”