Low resistance, unannealed ohmic contacts to n -type InAs _0.66 Sb _0.34

Abstract

Unannealed Ti=Pt=Au contacts to n-type InAs 0.66 Sb 0.34 were fabricated and measured. Extremely low specific contact resistances down to 2.4 Â 10 À8 O cm 2 were measured, commensurate with In 0.53 Ga 0.47 As, InAs, and In 0.27 Ga 0.73 Sb contact schemes with higher doping, which is due to the very high electron mobility in InAs 0.66 Sb 0.34 and hypothesised pinning of the surface Fermi level within the conduction band.

Antimonide-based pN terahertz mixer diodes

“…11 The new InAs 0.66 Sb 0.34 layer doped with Te to a carrier concentration of 3 ϫ 10 18 cm −3 and has a Hall mobility of 5600 cm 2 / V s and a contact resistance of 2.4ϫ 10 −8 ⍀ cm 2 . It should also be mentioned that only one peak is found in the x ray for InAs 0.66 Sb 0.34 , indicating that there is no evidence for phase separation.…”