The dc, small-signal, and microwave power output characteristics of AlGaN/GaN HEMTs are presented. A maximum drain current greater than 1 A/mm and a gate-drain breakdown voltage over 80V have been attained. For a 0.4 m gate length, an of 30 GHz and an max of 70 GHz have been demonstrated. Trapping effects, attributed to surface and buffer layers, and their relationship to microwave power performance are discussed. It is demonstrated that gate lag is related to surface trapping and drain current collapse is associated with the properties of the GaN buffer layer. Through a reduction of these trapping effects, a CW power density of 3.3 W/mm and a pulsed power density of 6.7 W/mm have been achieved at 3.8 GHz.

In this report, we study the effectiveness of hydrogen plasma surface treatments for improving the electrical properties of GaSb/Al2O3 interfaces. Prior to atomic layer deposition of an Al2O3 dielectric, p-GaSb surfaces were exposed to hydrogen plasmas in situ, with varying plasma powers, exposure times, and substrate temperatures. Good electrical interfaces, as indicated by capacitance-voltage measurements, were obtained using higher plasma powers, longer exposure times, and increasing substrate temperatures up to 250 °C. X-ray photoelectron spectroscopy reveals that the most effective treatments result in decreased SbOx, decreased Sb, and increased GaOx content at the interface. This in situ hydrogen plasma surface preparation improves the semiconductor/insulator electrical interface without the use of wet chemical pretreatments and is a promising approach for enhancing the performance of Sb-based devices.

We demonstrate a technique for generating azimuthally and radially polarized beams using a nematic liquid crystal spatial light modulator and a pi phase step. The technique is similar in concept to prior techniques that interfere TEM(01) and TEM(10) laser modes, but the presented technique removes the requirement of interferometric stability. We calculate an overlap integral of >0.96 with >70% efficiency from an input Gaussian mode. The technique can easily switch between beams with azimuthal and radial polarization.

We detect trace gases at parts-per-billion levels using evanescent-field absorption spectroscopy in silicon nitride microring resonators coated with a functionalized sorbent polymer. An analysis of the microring resonance line shapes enables a measurement of the differential absorption spectra for a number of vapor-phase analytes. The spectra are obtained at the near-infrared overtone of OH-stretch resonance, which provides information about the toxicity of the analyte vapor.

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